CTS521,L3F Toshiba

CTS521 Schottky Barrier Diode Silicon Epitaxial CTS521CTS521CTS521CTS521 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage : V = 0.5 V (max) F(3) (2) Thin and compact package : Thickness = 0.40 mm (max) 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Note Rating Unit Reverse voltage V 30 V R Peak forward current I 300 mA FM Average rectified current I 200 O Non-repetitive peak forward surge current I (Note 1) 1 A FSM Power dissipation P (Note 2) 150 mW D Junction temperature T 125 j Storage temperature T -55 to 125 stg Operating temperature T -40 to 100 opr Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10 ms pulse. Note 2: Mounted on a glass-epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Start of commercial production 2012-02 2014-04-04 1 Rev.3.0CTS521 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.20 V F(1) F V I = 5 mA 0.24 F(2) F V I = 200 mA 0.45 0.5 F(3) F Reverse current I V = 10 V 20 A R(1) R I V = 30 V 30 R(2) R Total capacitance C V = 0 V, f = 1 MHz 25 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number 79 CTS521 7. 7. Usage ConsiderationsUsage Considerations 7. 7. Usage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. 8. 8. Land Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference OnlyLand Pattern Dimensions for Reference Only Fig. Fig. Fig. Fig. 8.18.18.18.1 Land pattern dimensions for reference only (Unit : mm)Land pattern dimensions for reference only (Unit : mm)Land pattern dimensions for reference only (Unit : mm)Land pattern dimensions for reference only (Unit : mm) 2014-04-04 2 Rev.3.0