CUHZ Series TOSHIBA Zener Diode Silicon Epitaxial Planar Type CUHZ Series Applications Voltage surge protection Features Small package The typical voltage of VZ is accorded to E24 series Packaging and Internal Circuit 1 2 1: Cathode 2: Anode US2H Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25C) Characteristics Symbol Rating Unit *1 Power dissipation P 1200 mW D *2 P 500 mW D Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25C) *3 *3 Electrostatic discharge voltage Electrostatic discharge voltage Type No. Peak pulse Peak pulse Type No. Peak pulse Peak pulse *4 *4 *4 *4 power current power current Contact Air Contact Air V (kV) P (W) I (A) V (kV) P (W) I (A) ESD PK PP ESD PK PP CUHZ5V6 30 1750 91 CUHZ16V 30 2100 42 CUHZ6V2 30 1800 87 CUHZ20V 30 2100 36 CUHZ6V8 30 1800 73 CUHZ24V 30 2100 27 CUHZ8V2 30 1900 68 CUHZ30V 30 2100 26 CUHZ12V 30 2100 60 CUHZ36V 30 2100 23 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 *1: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm *2: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, pad dimensions of 4 mm 4 mm. *3: according to IEC61000-4-2 *4: according to IEC61000-4-5, tp = 8 / 20 s Start of commercial production 2021-04 2021 1 2021-09-17 Toshiba Electronic Devices & Storage Corporation CUHZ Series CUHZ series Electrical Characteristics (Unless otherwise specified, T = 25 C) a Type No. Zener Voltage Dynamic Impedance Dynamic Clamp Total Reverse Current resistance voltage capacitance *1 *1*2 *3 V (V) Test Current Z () Test Current R () V (V) C (pF) I (A) Test Voltage Z Z DYN C t R I (mA) I (mA) V (V) Z Z R Min Typ. Max Max Typ. Typ. Typ. Max CUHZ5V6 5.3 5.6 6.0 10 30 10 0.02 5.7 860 10 3.5 CUHZ6V2 5.8 6.2 6.6 10 30 10 0.02 6.1 735 10 5.0 CUHZ6V8 6.4 6.8 7.2 10 30 10 0.014 7.2 585 0.5 5.5 CUHZ8V2 7.7 8.2 8.7 10 30 10 0.035 8.5 450 0.1 7 CUHZ12V 11.4 12 12.6 10 30 10 0.13 13.6 280 0.1 10 CUHZ16V 15.3 16 17.1 10 35 10 0.085 17 210 0.1 14 CUHZ20V 18.8 20 21.2 10 35 10 0.13 20.6 180 0.1 17.6 CUHZ24V 22.8 24 25.6 10 70 10 0.14 25.5 150 0.1 19 CUHZ30V 28.0 30 32.0 10 80 10 0.21 33.8 125 0.1 27 CUHZ36V 34.0 36 38.0 9 100 9 0.39 41.2 105 0.1 32.5 *1: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 16 A and I = 30 A. TLP1 TLP2 *2: I = 16 A TLP *3: V = 0 V, f = 1 MHz R Marking List Marking (CUHZ5V6) Type No. Marking Type No. Marking 1 2 CUHZ5V6 CUHZ16V LL M7 CUHZ6V2 LM CUHZ20V M9 LL CUHZ6V8 CUHZ24V LN MB CUHZ8V2 LQ CUHZ30V MD CUHZ12V CUHZ36V M4 MF Land Pattern Dimensions (for reference only) (Unit: mm) 2021 2 2021-09-17 Toshiba Electronic Devices & Storage Corporation