MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES Low Noise Figure:NF=1.15dB (typ.) ( f=1GHz) 2 High Gain: S21e =11.8dB (typ.) ( f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Rating Unit Collector-emitter voltage V 13 V CES Collector-emitter voltage V 5.3 V CEO Emitter-base voltage V 0.6 V EBO Collector-current I 100 mA C Base-current I 10 mA B Collector power dissipation P(Note1) 800 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2008-11 1 2014-03-01 MT3S113 Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ Max Unit Transition frequency f V = 5V, I = 50mA 10.5 12.5 GHz T CE C 2 S21e (1) V = 5V, I = 50mA, f = 500MHz 17.5 dB CE C Insertion gain 2 S21e (2) V = 5V, I = 50mA, f = 1GHz 9.5 11.8 dB CE C NF(1) V = 5V, I = 50mA, f = 500MHz 0.91 dB CE C Noise figure NF(2) V = 5V, I = 50mA, f = 1GHz 1.15 1.45 dB CE C rd V = 5V, I = 50mA, f = 500MHz, 3 order intermodulation distortion output CE C OIP3 32 35.9 dBmW intercept point f=1MHz Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ Max Unit Collector cut-off current I V = 5V, I = 0 0.1 A CBO CB E DC current gain h V = 5V, I = 30mA 200 400 FE CE C Output capacitance C V = 5V, I = 0, f = 1MHz 1.49 pF ob CB E Reverse transfer capacitance C V = 5V, I = 0, f = 1MHz (Note3) 0.94 1.25 pF re CB E Note 3:C is measured using a 3-terminal method with capacitance bridge re Caution: This device is sensitive to electrostatic discharge due to the high frequency transistor process of f =60GHz T class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2014-03-01