BFP840FESD SiGe:C NPN RF bipolar transistor Product description The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency f = 85 GHz to enable best in class noise performance at high frequencies: T NF = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA min High gain G = 23 dB at 5.5 GHz, 1.8 V, 10 mA ms OIP = 22 dBm at 5.5 GHz, 1.8 V, 10 mA 3 Suitable for low voltage applications e.g. V = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding CC collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP840FESD / BFP840FESDH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E T8s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-09-26BFP840FESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information TSFP-4-1 . 20 Revision history . 21 Disclaimer 22 Datasheet 2 v2.0 2018-09-26