2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, S = 11dB (f = 1 GHz) 21e Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 3 V EBO Base current I 40 mA B Collector current I 80 mA C Collector power dissipation P 100 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-2H1A Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 2.4 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Transition frequency f V = 10 V, I = 20 mA 5 7 GHz T CE C 2 S (1) V = 10 V, I = 20 mA, f = 500 MHz 16.5 21e CE C Insertion gain dB 2 S (2) V = 10 V, I = 20 mA, f = 1 GHz 7.5 11 21e CE C NF (1) V = 10 V, I = 5 mA, f = 500 MHz 1 CE C Noise figure dB NF (2) V = 10 V, I = 5 mA, f = 1 GHz 1.1 2 CE C Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 10 V, I = 0 1 A CBO CB E Emitter cut-off current I V = 1 V, I = 0 1 A EBO EB C h FE DC current gain V = 10 V, I = 20 mA 80 240 CE C (Note 1) Output capacitance C 1.0 pF ob V = 10 V, I = 0, f = 1 MHz (Note 2) CB E Reverse transfer capacitance C 0.65 1.15 pF re Note 1: h classification O: 80 to 160, Y: 120 to 240 FE Start of commercial production Note 2: C is measured by 3 terminal method with capacitance bridge. re 1993-10 1 2014-03-01 2SC5086 Marking 2 2014-03-01