2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, S = 7.5dB (f = 2 GHz) 21e Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 10 V CEO Emitter-base voltage V 1.5 V EBO Base current I 7 mA B Collector current I 15 mA C Collector power dissipation P 100 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-70 absolute maximum ratings. TOSHIBA 2-2E1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.006 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Transition frequency f V = 6 V, I = 7 mA 7 10 GHz T CE C 2 S (1) V = 6 V, I = 7 mA, f = 1 GHz 13 21e CE C Insertion gain dB 2 S (2) V = 6 V, I = 7 mA, f = 2 GHz 4.5 7.5 21e CE C NF (1) V = 6 V, I = 3 mA, f = 1 GHz 1.4 CE C Noise figure dB NF (2) V = 6 V, I = 3 mA, f = 2 GHz 1.8 3.0 CE C Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 10 V, I = 0 1 A CBO CB E Emitter cut-off current I V = 1 V, I = 0 1 A EBO EB C h FE DC current gain V = 6 V, I = 7 mA 50 160 CE C (Note 1) Output capacitance C 0.5 pF ob V = 10 V, I = 0, f = 1 MHz (Note 2) CB E Reverse transfer capacitance C 0.4 0.85 pF re Note 1: h classification R: 50 to 100, O: 80 to 160 FE Start of commercial production Note 2: C is measured by 3 terminal method with capacitance bridge. re 1993-10 1 2014-03-01 2SC5095 Marking 2 2014-03-01