X-On Electronics has gained recognition as a prominent supplier of 2SC5197-O(Q) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5197-O(Q) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5197-O(Q) Toshiba

2SC5197-O(Q) electronic component of Toshiba
2SC5197-O(Q) Toshiba
2SC5197-O(Q) Bipolar Transistors - BJT
2SC5197-O(Q)  Semiconductors

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See Product Specifications
Part No. 2SC5197-O(Q)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3PN
Datasheet: 2SC5197-O(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 15.1415 ea
Line Total: USD 302.83 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 20
Multiples : 20
20 : USD 15.1415
60 : USD 13.4627
100 : USD 12.123

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Brand
Deleted
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Frequency
Power Dissipation
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain
Operating Temperature Classification
Category
Rad Hardened
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We are delighted to provide the 2SC5197-O(Q) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5197-O(Q) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm Complementary to 2SA1940 Suitable for use in 55-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO Collector current I 8 A C Base current I 0.8 A B Collector power dissipation P 80 W C (Tc = 25C) Junction temperature T 150 C j JEDEC Storage temperature range T 55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 4.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC5197 Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 120 V, I = 0 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 5.0 A EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 120 V (BR) CEO C B h FE (1) V = 5 V, I = 1 A 55 160 CE C DC current gain (Note) h V = 5 V, I = 4 A 35 75 FE (2) CE C Collector-emitter saturation voltage V I = 6 A, I = 0.6 A 0.35 2.0 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 4 A 0.95 1.5 V BE CE C Transition frequency f V = 5 V, I = 1 A 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 120 pF ob CB E Note: h classification R: 55 to 110, O: 80 to 160 FE (1) Marking TOSHIBA C5197 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or Characteristics lead (Pb)-free finish. indicator 2 2006-11-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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