2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: f = 200 MHz (typ.) T Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 180 V CBO Collector-emitter voltage V 180 V CEO Emitter-base voltage V 5 V EBO Collector current I 2 A C Base current I 1 A B Ta = 25C 2.0 Collector power P W C dissipation Tc = 25C 20 JEDEC Junction temperature T 150 C j JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC5171 Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 180 V, I = 0 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 5.0 A EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 180 V (BR) CEO C B h V = 5 V, I = 0.1 A 100 320 FE (1) CE C DC current gain h V = 5 V, I = 1 A 50 FE (2) CE C Collector-emitter saturation voltage V I = 1 A, I = 0.1 A 0.16 1.0 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 1 A 0.68 1.5 V BE CE C Transition frequency f V = 5 V, I = 0.3 A 200 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 16 pF ob CB E Marking C5171 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10