2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 10 V CEO Emitter-base voltage V 3 V EBO Base current I 15 mA B Collector current I 30 mA C Collector power dissipation P 100 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 2-2H1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 2.4 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-10 1 2014-03-01 2SC5108 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 10 V, I = 0 1 A CBO CB E Emitter cut-off current I V = 1 V, I = 0 1 A EBO EB C h FE DC current gain V = 5 V, I = 5 mA 80 240 CE C (Note 1) Transition frequency f V = 5 V, I = 5 mA 4 6 GHz T CE C 2 Insertion gain S V = 5 V, I = 5 mA, f = 1 GHz 7 11 dB 21e CE C Output capacitance C 0.7 pF ob V = 5 V, I = 0, f = 1 MHz (Note 2) CB E Reverse transfer capacitance C 0.5 0.9 pF re Collector-base time constant C rbb V = 5 V, I = 3 mA, f = 30 MHz 5.5 15 ps c CB C Note 1: h classification O: 80 to 160, Y: 120 to 240 FE Note 2: C is measured by 3 terminal method with capacitance bridge. re Marking 2 2014-03-01