X-On Electronics has gained recognition as a prominent supplier of 2SC5198-O(S1,E,S) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5198-O(S1,E,S) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5198-O(S1,E,S) Toshiba

Name: 2SC5198-O(S1,E,S)
Brand: Toshiba
SKU: 2SC5198OS1ES_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

2SC5198-O(S1,E,S) electronic component of Toshiba

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See Product Specifications

Part No.	2SC5198-O(S1,E,S)
Manufacturer:	Toshiba
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 10A 140V TO-3P RoHS
Datasheet:	2SC5198-O(S1,E,S) Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.32 ea
Line Total: USD 1.32

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

2SC5198-O(S1,E,S) More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 1 Multiples : 1	1 : USD 1.32 10 : USD 1.0947 25 : USD 0.8759 100 : USD 0.7653 500 : USD 0.6986 1000 : USD 0.6631

Specifications

Manufacturer Toshiba Toshiba
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package TO - 3P TO - 3P
Brand Category Toshiba Toshiba
Transistor Type npn npn
Current - Collector Ic Max 10 A 10 A
Voltage - Collector Emitter Breakdown Max 140 V 140 V
Power - Max 100 W 100 W
Collector Cut-Off Current Icbo 5 uA 5 uA
Collector-Emitter Breakdown Voltage Vceo 140 V 140 V
Power Dissipation Pd 100 W 100 W
Collector Current Ic 10 A 10 A
Dc Current Gain Hfe@Ic Vce 80@1 A , 5V 80@1 A , 5V
Transition Frequency Ft 30MHz 30MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 300 mV @7A , 700 mA 300 mV @7A , 700 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the 2SC5198-O(S1,E,S) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5198-O(S1,E,S) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The Toshiba 2SC5198-O(S1,E,S) is an NPN type bipolar junction transistor (BJT) with a maximum collector current of 10 Amps, maximum collector-emitter voltage of 140 Volts, and maximum emitter-base voltage of 6 Volts. It is housed in a TO-3P package and is RoHS (Restriction Of Hazardous Substances) compliant, meaning it meets environmental protection requirements. The transistor is suitable for switching and amplification applications in high-power audio and communication systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

TOSHIBA LED LIGHTING may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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