SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit: mm Low ON-resistance: R = 71 m (max) ( V = -10 V) DS(ON) GS R = 105 m (max) ( V = -4.5 V) DS(ON) GS RDS(ON) = 136 m (max) ( VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -30 V DSS Gate-Source voltage V 20 V GSS DC I (Note 1) -4 D Drain current A Pulse I (Note 1,2) -16 DP P (Note 3) 1 D Power dissipation W t < 10s 2 Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg 1: Gate SOT-23F Note: Using continuously under heavy loads (e.g. the application of high 2: Source temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the TOSHIBA 2-3Z1S Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 11 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: PW 1ms, Duty 1 Note 3: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top View) 3 3 KFL 1 2 1 2 Start of commercial production 2010-08 1 2018-10-04 2010 - 2018 Toshiba Electronic Devices & Storage Corporation SSM3J334R Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -10 mA, VGS = 0 V -30 V Drain-Source breakdown voltage V I = -10 mA, V = 10 V .(Note 5) -21 V (BR) DSX D GS Drain cut-off current I V = -30 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Gate threshold voltage V V = -10 V, I = -100 A -0.8 -2.0 V th DS D Forward transfer admittance Y V = -10 V, I = -1.0 A (Note 4) 2.3 4.6 S fs DS D I = -3.0 A, V = -10 V (Note 4) 54 71 D GS Drainsource ON-resistance R I = -2.0 A, V = -4.5 V (Note 4) 80 105 m DS (ON) D GS 89 I = -1.0 A, V = -4.0 V (Note 4) 136 D GS Input capacitance C 280 iss V = -15 V, V = 0 V DS GS Output capacitance C 55 pF oss f = 1 MHz Reverse transfer capacitance C 40 rss Turn-on time t 13 on V = -15 V, I = -1.0 A DD D Switching time ns V = 0 to -4.5 V, R = 10 GS G Turn-off time t 22 off Total Gate Charge Q 5.9 g VDD = -15 V, ID = -4.0 A, Gate-Source Charge Q 0.8 nC gs1 V = -10 V GS Gate-Drain Charge Q 1.2 gd Drain-Source forward voltage V I = 4.0 A, V = 0 V (Note 4) 0.9 1.2 V DSF D GS Note4: Pulse test Note5: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) VIN 90% OUT 0 IN 10% 4.5 V 4.5V R L (c) VOUT V DS (ON) 90% 10 s V DD V = -15 V DD 10% R = 10 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-100A for the SSM3J334R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2018-10-04 2010 - 2018 Toshiba Electronic Devices & Storage Corporation R G