X-On Electronics has gained recognition as a prominent supplier of SSM3J334R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J334R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J334R,LF Toshiba

SSM3J334R,LF electronic component of Toshiba
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Part No.SSM3J334R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF
Datasheet: SSM3J334R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1994 ea
Line Total: USD 0.2 
Availability - 7339
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7339
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1994
10 : USD 0.1217
25 : USD 0.1202
100 : USD 0.1118
250 : USD 0.1035
500 : USD 0.095
1000 : USD 0.0866
3000 : USD 0.0781
6000 : USD 0.0697

7339
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 110
Multiples : 1
110 : USD 0.0697

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3J334R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J334R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit: mm Low ON-resistance: R = 71 m (max) ( V = -10 V) DS(ON) GS R = 105 m (max) ( V = -4.5 V) DS(ON) GS RDS(ON) = 136 m (max) ( VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -30 V DSS Gate-Source voltage V 20 V GSS DC I (Note 1) -4 D Drain current A Pulse I (Note 1,2) -16 DP P (Note 3) 1 D Power dissipation W t < 10s 2 Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg 1: Gate SOT-23F Note: Using continuously under heavy loads (e.g. the application of high 2: Source temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the TOSHIBA 2-3Z1S Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 11 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: PW 1ms, Duty 1 Note 3: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top View) 3 3 KFL 1 2 1 2 Start of commercial production 2010-08 1 2018-10-04 2010 - 2018 Toshiba Electronic Devices & Storage Corporation SSM3J334R Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -10 mA, VGS = 0 V -30 V Drain-Source breakdown voltage V I = -10 mA, V = 10 V .(Note 5) -21 V (BR) DSX D GS Drain cut-off current I V = -30 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Gate threshold voltage V V = -10 V, I = -100 A -0.8 -2.0 V th DS D Forward transfer admittance Y V = -10 V, I = -1.0 A (Note 4) 2.3 4.6 S fs DS D I = -3.0 A, V = -10 V (Note 4) 54 71 D GS Drainsource ON-resistance R I = -2.0 A, V = -4.5 V (Note 4) 80 105 m DS (ON) D GS 89 I = -1.0 A, V = -4.0 V (Note 4) 136 D GS Input capacitance C 280 iss V = -15 V, V = 0 V DS GS Output capacitance C 55 pF oss f = 1 MHz Reverse transfer capacitance C 40 rss Turn-on time t 13 on V = -15 V, I = -1.0 A DD D Switching time ns V = 0 to -4.5 V, R = 10 GS G Turn-off time t 22 off Total Gate Charge Q 5.9 g VDD = -15 V, ID = -4.0 A, Gate-Source Charge Q 0.8 nC gs1 V = -10 V GS Gate-Drain Charge Q 1.2 gd Drain-Source forward voltage V I = 4.0 A, V = 0 V (Note 4) 0.9 1.2 V DSF D GS Note4: Pulse test Note5: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) VIN 90% OUT 0 IN 10% 4.5 V 4.5V R L (c) VOUT V DS (ON) 90% 10 s V DD V = -15 V DD 10% R = 10 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-100A for the SSM3J334R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2018-10-04 2010 - 2018 Toshiba Electronic Devices & Storage Corporation R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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