TBAT54,TBAT54A,TBAT54C,TBAT54S Schottky Barrier Diode Silicon Epitaxial TBAT54,TBAT54A,TBAT54C,TBAT54STBAT54,TBAT54A,TBAT54C,TBAT54S TBAT54,TBAT54A,TBAT54C,TBAT54STBAT54,TBAT54A,TBAT54C,TBAT54S 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Ultra-High-Speed Switching 2. 2. 2. 2. PackagingPackagingPackagingPackaging SOT23 3. 3. MarkingMarking 3. 3. MarkingMarking TBAT54TBAT54 TBAT54ATBAT54A TBAT54CTBAT54C TBAT54STBAT54S TBAT54TBAT54 TBAT54ATBAT54A TBAT54CTBAT54C TBAT54STBAT54S Part Number Marking Code Configuration TBAT54 TL4 single TBAT54A TV3 common anode TBAT54C TW1 common cathode TBAT54S TV4 series Start of commercial production 2016-04 2016-2017 2017-11-17 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TBAT54,TBAT54A,TBAT54C,TBAT54S 4. 4. 4. 4. Internal CircuitInternal CircuitInternal CircuitInternal Circuit TBAT54TBAT54TBAT54TBAT54 TBAT54ATBAT54ATBAT54ATBAT54A TBAT54CTBAT54CTBAT54CTBAT54C TBAT54STBAT54STBAT54STBAT54S 5. 5. 5. 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 35 V RM Reverse voltage V 30 R Average rectified current I (Note 3) 200 mA O Peak forward current I (Note 3) 300 FM Non-repetitive peak forward surge current I (Note 1), (Note 3) 1 A FSM Power dissipation P (Note 2), (Note 3) 320 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10 ms pulse. Note 2: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.42 mm2 3) Note 3: Unit rating. Total rating = unit rating 1.5 (TBAT54A,TBAT54C), Total rating = unit rating 0.7 (TBAT54S) 2016-2017 2017-11-17 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0