X-On Electronics has gained recognition as a prominent supplier of TBAV70,LM Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. TBAV70,LM Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

TBAV70,LM Toshiba

TBAV70,LM electronic component of Toshiba
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Part No.TBAV70,LM
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Switching Diode 80V 215mA
Datasheet: TBAV70,LM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.022 ea
Line Total: USD 66 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0372
9000 : USD 0.035

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0223

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.022
9000 : USD 0.0198
24000 : USD 0.0187

   
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We are delighted to provide the TBAV70,LM from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TBAV70,LM and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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TBAV70 Switching Diodes Silicon Epitaxial Planar TBAV70TBAV70TBAV70TBAV70 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Ultra-High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Anode 1 2: Anode 2 3: Cathode SOT23 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Average rectified current I (Note 1) 215 mA O Peak forward current I (Note 1) 500 FM Non-repetitive peak forward surge current I (Note 1), (Note 2) 2 A FSM Power dissipation P (Note 3) 320 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating 1.5 Note 2: Measured with a 10 ms pulse. Note 3: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt, Cu pad: 0.42 mm2 3) Start of commercial production 2016-05 2016 Toshiba Corporation 2016-09-30 1 Rev.1.0TBAV70 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 mA 0.715 V F F V (2) I = 10 mA 0.855 F F V (3) I = 50 mA 1.0 F F V (4) I = 150 mA 1.25 F F Reverse current I (1) V = 25 V 30 nA R R I (2) V = 80 V 500 R R I (3) V = 25 V, T = 150 30 A R R j I (4) V = 80 V, T = 150 100 R R j Total capacitance C V = 0 V, f = 1 MHz 0.9 pF t R Reverse recovery time t I = 10 mA, See Fig. 4.1. 1.6 4.0 ns rr F Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 5. 5. MarkingMarking 5. 5. MarkingMarking Fig. Fig. Fig. Fig. 5.15.15.15.1 MarkingMarkingMarkingMarking 2016 Toshiba Corporation 2016-09-30 2 Rev.1.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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