TBD62183AFNG,EL Toshiba

TBD62183AFNG/FWG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62183AFNG, TBD62183AFWG 8channel sink type DMOS transistor array TBD62183AFNG TBD62183A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. Features 8 circuits built-in High voltage : V = 50 V (MAX) OUT SSOP18-P-225-0.65 High current : I = 50 mA/ch (MAX) OUT Input voltage(output on) : 2.8 V (MIN) Input voltage(output off) : 0.6 V (MAX) TBD62183AFWG Package : FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 P-SOP18-0812-1.27-001 Pin connection (top view) Weight SSOP18-P-225-0.65 : 0.09 g (Typ.) P-SOP18-0812-1.27-001 : 0.48 g (Typ.) Pin connection may be simplified for explanatory purpose. 2016-07-15 1 2016 Toshiba Corporation TBD62183AFNG/FWG Pin explanations Pin No. Pin name Function Input pin 1 I1 2 I2 Input pin Input pin 3 I3 4 I4 Input pin Input pin 5 I5 6 I6 Input pin Input pin 7 I7 8 I8 Input pin GND pin 9 GND 10 COMMON Common pin 11 O8 Output pin 12 O7 Output pin Output pin 13 O6 14 O5 Output pin 15 O4 Output pin Output pin 16 O3 17 O2 Output pin 18 O1 Output pin Equivalent circuit COMMON Clamp diode OUTPUT INPUT Clamp Equivalent circuit may be simplified for explanatory purpose. 2016-07-15 2 2016 Toshiba Corporation