TC74VHC04FK(EL,K) Toshiba

TC74VHC04F/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC04F, TC74VHC04FK Hex Inverter The TC74VHC04 is an advanced high speed CMOS INVERTER TC74VHC04F 2 fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. TC74VHC04FK Features High speed: t = 3.8 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 2 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Power down protection is provided on all inputs. Balanced propagation delays: t t pLH pHL Weight Wide operating voltage range: V = 2 V to 5.5 V CC (opr) SOP14-P-300-1.27A : 0.18 g (typ.) Low noise: V = 0.8 V (max) OLP VSSOP14-P-0030-0.50 : 0.02 g (typ.) Pin and function compatible with 74ALS04 Start of commercial production 1991-05 2019 2019-01-31 1 Toshiba Electronic Devices & Storage Corporation TC74VHC04F/FK Pin Assignment IEC Logic Symbol (1) (2) 1A 1 1Y 1A 1 14 V CC (3) (4) 2A 2Y 1Y 2 13 6A (5) (6) 3A 3Y (9) (8) 2A 12 6Y 3 4A 4Y (11) (10) 5A 5Y 2Y 4 11 5A (13) (12) 6A 6Y 3A 5 10 5Y 3Y 6 9 4A GND 7 8 4Y (top view) Truth Table A Y L H H L Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2019 2019-01-31 2 Toshiba Electronic Devices & Storage Corporation