TC74VHC05F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC05F, TC74VHC05FT, TC74VHC05FK Hex Inverter (open drain) TC74VHC05F The TC74VHC05 is an advanced high speed CMOS INVERTER 2 fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the TC74VHC04, but the TC74VHC05 has high performance MOS N-channel transistor. (OPEN-DRAIN outputs) This device can, therefore, with a suitable pull-up resistors, be TC74VHC05FT used in wired-AND, LED drive and other applications. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Features High speed: t = 3.8 ns (typ.) at V = 5 V TC74VHC05FK pZ CC Low power dissipation: I = 2 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Power down protection is provided on all inputs. Wide operating voltage range: V (opr) = 2 to 5.5 V CC Low noise: V = 0.8 V (max) OLP Pin and function compatible with 74ALS05 Weight SOP14-P-300-1.27A : 0.18 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) VSSOP14-P-0030-0.50 : 0.02 g (typ.) Start of commercial production 1998-06 1 2014-03-01 TC74VHC05F/FT/FK Pin Assignment IEC Logic Symbol (1) (2) 1A 1Y 1 (3) (4) 1A 1 14 V CC 2A 2Y (5) (6) 3A 3Y 1Y 2 13 6A (9) (8) 4A 4Y (11) (10) 5A 5Y 2A 12 6Y 3 (13) (12) 6A 6Y 2Y 4 11 5A 3A 5 10 5Y 3Y 6 9 4A GND 7 8 4Y (top view) Truth Table A Y L Z H L System Diagram (per gate) V CC Y A Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-03-01