TCK421G TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK421G Over Voltage Protection MOSFET Gate Driver IC Description TCK421G series is Over Voltage Protection Gate Driver IC for External N-channel MOSFET. This product support to MOSFET operating in wide voltage line from 2.7 V to 28 V with various Over Voltage Lock Out lineups. And this features low standby current, less than 1 A, built in charge pump circuit and MOSFET gate- source protection circuit. Package is small and thin WCSP6G (1.2 mm x 0.8 mm (typ.), t: 0.35 mm(max)). Thus this is suitable for mobile, wearable system and power management circuit such as load switch application. WCSP6G Weight : 0.61 mg ( typ.) Applications Load switch circuit for mobile, wearable, and IoT equipment Features Gate driver for N-channel Common Drain MOSFET Gate driver for N-channel Single High side MOSFET High maximum input voltage: VIN max = 40 V Wide input voltage operation: V = 2.7 to 28 V IN Gate-Source protection circuit Over Voltage Lock Out : V = 23.26 V typ IN OVLO Under Voltage Lock Out : V = 2.0 V typ IN UVLO Built in Charge pump circuit: Gate source voltage V = 10 V typ GS Low standby current : I = 0.9 A max at V = 12 V Q(OFF) IN Start of commercial production 2021-11 2021 2021-12-16 1 Toshiba Electronic Devices & Storage Corporation YYWW 421 TCK421G Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Input voltage V -0.3 to 40 V IN Output voltage V -0.3 to 40 V OUT Control voltage V -0.3 to 6 V CT Ourput GATE voltage V -0.3 to 40 V GATE1,2 Power dissipation P 800 (Note 1) mW D Operating temperature range T -40 to 85 C opr Junction temperature Tj 150 C Storage temperature T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. ( 40 mm 40 mm 1.6 mm, Cu 4 layer ) Top Marking, Pin Assignment (top view) 1 2 A1: VGATE1 B1: VGATE2 A C1: VOUT A2: VIN B2: GND B C2: VCT YYWW: Lot No. C 421: TCK421G 2021 2021-12-16 2 Toshiba Electronic Devices & Storage Corporation