TCR3RM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3RM series Ultra high Ripple rejection ratio, 300 mA CMOS Low Dropout Regulator in ultra small package Description The TCR3RM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low output voltage noise and ultra-high Ripple rejection ratio. These voltage regulators are available in fixed output voltages between 0.9 V and 4.5 V and capable of driving up to 300 mA. They feature Overcurrent protection, Thermal shutdown and Auto- discharge. The TCR3RM series is offered in the ultra small plastic mold package DFN4C/DFN4F (1.0 mm x 1.0 mm t 0.38 mm (Typ.)) and DFN4C/DFN4F has a high ripple rejection ratio of 100 dB (f = 1 kHz, 2.8 V output). As small ceramic input and output capacitors 1F can be used with the TCR3RM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Applications Power IC developed for portable applications Features Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm t 0.38 mm (Typ.)). High Ripple rejection ratio 100 dB (Typ.) 1 kHz (V = 2.8 V) OUT High Ripple rejection ratio 93 dB (Typ.) 10 kHz (V = 2.8 V) OUT High Ripple rejection ratio 68 dB (Typ.) 100 kHz (V = 2.8 V) OUT High Ripple rejection ratio 68 dB (Typ.) 1 MHz (V = 2.8 V) OUT Low output noise voltage (V = 5 V (Typ.) at 10 Hz f 100 kHz) NO rms Low quiescent current (I = 7 A (Typ.) at I = 0 mA) B OUT Overcurrent protection Thermal shutdown Auto-discharge Low Dropout voltage V = 130 mV (Typ.), V = 2.8 V, I = 300 mA DO OUT OUT Wide range output voltage line up (V = 0.9 to 4.5 V) OUT Pull down connection between CONTROL and GND Ceramic capacitors can be used (C = 1 F, C =1 F) IN OUT Start of commercial production 2020-09 2020-2021 2021-11-10 1 Toshiba Electronic Devices & Storage Corporation TCR3RM series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 6.0 V IN Control voltage V -0.3 to V + 0.3 6.0 V CT IN Output voltage V -0.3 to V + 0.3 6.0 V OUT IN Output current I 300 mA OUT Power dissipation P 420 (Note1) mW D Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Pin Assignment (top view) VIN CONTROL 4 3 * 1 2 GND VOUT *Center electrode should be connected to GND or Open Operating Ranges Characteristics Symbol Ranges Unit Input voltage V 1.8 to 5.5 (Note 2) V IN Control voltage V 0 to V V CT IN Output voltage V 0.9 to 4.5 V OUT Output current I DC 300 mA OUT Operating Temperature T -40 to 85 C opr Output Capacitance C 1.0 F OUT Input Capacitance C 1.0 F IN Note 2: Please refer to Dropout Voltage table(Page 6) and use it within Absolute Maximum Ratings Junction temperature and Operating Temperature Ranges. 2020-2021 2021-11-10 2 Toshiba Electronic Devices & Storage Corporation