TH58NVG3S0HTAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
8 GBIT (1G 8 BIT) CMOS NAND E PROM
DESCRIPTION
The TH58NVG3S0HTAI0 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and
2
Programmable Read-Only Memory (NAND E PROM) organized as (4096 256) bytes 64 pages 4096blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block
unit (256 Kbytes 16 Kbytes: 4352 bytes 64 pages).
The TH58NVG3S0HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
x8
Memory cell array 4352 128K 8 2
Register 4352 8
Page size 4352 bytes
Block size (256K 16K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 4016 blocks
Max 4096 blocks
Power supply
V 2.7V to 3.6V
CC
Access time
Cell array to register 25 s max
Serial Read Cycle 25 ns min (CL=50pF)
Program/Erase time
Auto Page Program 300 s/page typ.
Auto Block Erase 2.5 ms/block typ.
Operating current
Read (25 ns cycle) 30 mA max.
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
Standby 100 A max
Package
TSOP I 48-P-1220-0.50 (Weight: 0.54 g typ.)
8 bit ECC for each 512Byte is required.
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PIN ASSIGNMENT (TOP VIEW)
TH58NVG3S0HTAI0
8 8
NC 1 48 NC
NC 2 47 NC
NC 3 46 NC
NC 4 45 NC
NC 5 44 I/O8
NC 6 43 I/O7
7 42 I/O6
RY/BY
RE 8 41 I/O5
CE 9 40 NC
NC 10 39 NC
NC 11 38 NC
V 12 37 V
CC CC
V 13 36 V
SS SS
NC 14 35 NC
NC 15 34 NC
CLE 16 33 NC
ALE 17 32 I/O4
WE 18 31 I/O3
WP 19 30 I/O2
NC 20 29 I/O1
NC 21 28 NC
NC 22 27 NC
NC 23 26 NC
NC 24 25 NC
PIN NAMES
I/O1 to I/O8 I/O port
CE Chip enable
Write enable
WE
RE Read enable
CLE Command latch enable
ALE Address latch enable
Write protect
WP
RY/BY Ready/Busy
V Power supply
CC
V Ground
SS
NC No Connection
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