TLP109(IGM) Photocouplers Infrared LED & Photo IC TLP109(IGM)TLP109(IGM)TLP109(IGM)TLP109(IGM) 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Intelligent Power Module Signal Isolation High-Speed Digital Interfacing for Instrumentation and Control Devices Industrial Inverters 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP109(IGM) mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP109(IGM) consists of an infrared LED optically coupled to a high-speed photodiode-transistor chip. The TLP109(IGM) is housed in the SO6 package and guarantees a creepage distance of 5.0 mm, a clearance of 5.0 mm and an insulation thickness of 0.4mm. Therefore, the TLP109(IGM) meets the reinforced insulation class requirements of international safety standards. The TLP109(IGM) guarantees minimum and maximum of propagation delay time, switching time dispersion, and high common mode transient immunity. Therefore TLP109 (IGM) is suitable for isolation interface between IPM(Intelligent Power Module) and control IC circuits in motor control application. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Isolation voltage: 3750 Vrms (min) (2) Common-mode transient immunity: 10 kV/s (min) V = 1500 V CM p-p (3) Propagation delay time t /t = 0.1 s (min) pHL pLH = 0.8 s (max) I = 10 mA, V = 15 V, F CC R = 20 k, T = 25 L a (4) Pulse width distortion: 0.7 s (max) ( t -t ) pHL pLH (5) TTL compatible (6) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). Start of commercial production 2008-07 2017-2019 2019-09-20 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TLP109(IGM) 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V CC 11-4L1S 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2017-2019 2019-09-20 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0