Product Information

TLP109(V4,E

TLP109(V4,E electronic component of Toshiba

Datasheet
Toshiba High Speed Optocouplers High Speed Coupler

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.213 ea
Line Total: USD 3.21

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 125
Multiples : 1

Stock Image

TLP109(V4,E
Toshiba

125 : USD 0.84
1250 : USD 0.7748
12500 : USD 0.5949

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TLP109(V4,E
Toshiba

1 : USD 1.6477
10 : USD 1.006
100 : USD 0.7447
500 : USD 0.6844
1000 : USD 0.5636
2000 : USD 0.5354
5000 : USD 0.5233
10000 : USD 0.5112

0 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TLP109(V4,E
Toshiba

1 : USD 3.213
10 : USD 0.8471
100 : USD 0.608
500 : USD 0.5756
1000 : USD 0.4871
2500 : USD 0.4709

0 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 16
Multiples : 1

Stock Image

TLP109(V4,E
Toshiba

16 : USD 1.3066

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Data Rate
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Packaging
Number of Channels
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Current Transfer Ratio
Output Current
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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TLP109 TOSHIBA Photocoupler IRED & PhotoIC TLP109 Programmable Controllers Unit: mm Industrial Inverters Switching Power Supplies The Toshiba TLP109 mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP109 consists of a high-output-power infrared LED optically coupled to a high-speed photodiode-transistor chip. The TLP109 is housed in the SO6 package and guarantees a creepage distance of 5.0 mm, a clearance of 5.0 mm and an insulation thickness of 0.4 mm. Therefore, the TLP109 meets the reinforced insulation class requirements of international safety standards. Isolation voltage: 3750 Vrms (min) Switching speed: t = 0.8 s, t = 0.8 s (max) pHL pLH R = 1.9 k L JEDEC TTL-compatible JEITA UL-recognized : UL 1577, File No.E67349 TOSHIBA 11-4L1 cUL-recognized : CSA Component Acceptance Service No.5A Weight: 0.08 g (typ.) File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1 : When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (Top View) Schematic IF I CC VCC 1: ANODE 1 3: CATHODE 6 I O 4: EMITTER (GND) V O 5: COLLECTOR (OUTPUT) VF 5 6: V CC GND 3 4 SHIELD Construction Mechanical Ratings Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) Start of commercial production 2008-07 2019 1 2019-10-10 Toshiba Electronic Devices & Storage Corporation TLP109 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 20 mA F Forward Current Derating (Ta 95 C) IF/C -0.36 mA/C Pulse forward current (Note 1) I 40 mA FP Peak transient forward current (Note 2) I 1 A FPT Reverse voltage V 5 V R Power dissipation (Note 3) P 40 mW D Output current I 8 mA O Output Current Derating (Ta 95 C) IO/C -0.3 mA/C Peak output current I 16 mA OP Supply voltage V 0.5 to 30 V CC Output voltage V 0.5 to 20 V O Output power dissipation (Note 4) P 100 mW O Operating temperature range T 55 to 125 opr C Storage temperature range T 55 to 125 C stg Lead solder temperature (10 s) T 260 sol C Isolation Voltage BV 3750 Vrms S (AC, 60 s, R.H. 60 %) (Note 5) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 50 % duty cycle, 1 ms pulse width. Derate 0.72 mA / C above 95 C. Note 2: Pulse width 1 s, 300 pps. Note 3: Derate 0.72 mW / C above 95 C. Note 4: Derate 1.8 mW / C above 95 C. Note 5: Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2019 2 2019-10-10 Toshiba Electronic Devices & Storage Corporation Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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