TLP116A TOSHIBA PHOTOCOUPLER GaAAs IRED & PHOTO-IC TLP116A Plasma Display Panels (PDPs) Unit: mm High-Speed Interface Factory Automation (FA) 4 6 5 The Toshiba TLP116A mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP116A consists of a GaAAs light-emitting diode and an integratedhi gh-gain, high-speed photodetector. This unit is housed in the 6-pin SO package and guarantees a creepage distance of 5.0mm, a clearance of 5.0mm and an insulation thickness of 0.4mm. 1 3 Therefore, the TLP116A meets the reinforced insulation class requirements of 3.7 0.15 7.0 0.4 international safety standards. Inverter logic (totem-pole output) 0.4 0.5 min SO6 package 1.27 2.54 Guaranteed performance over: 40 to 100C Power supply voltage: 4.5 to 5.5V TOSHIBA 114L1 Input thresholds current: I = 5 mA (max) Weight: 0.08 g (typ.) FHL Propagation delay time (tpHL / tpLH): 60 ns (max) Pin Configuration (Top View) Switching speed: 20 MBd (typ.) 1: ANODE 1 6 VCC Common-mode transient immunity: 10 kV/s 3: CATHODE Isolation voltage: 3750 Vrms 5 4: GND UL approval: UL1577, File No.E67349 Under application 5: V (Output) O GND 3 4 6: V CC cUL approved :CSA Component Acceptance Service SHIELD N o. 5A , File No.E67349 CQC approved:GB4943.1,GB8898 Japan Factory 2000m Option (V4) VDE approved : DIN EN60747-5-5 ,EN60065,EN60950-1 (Note1) E N 62 368 -1(Pending) (Note1) Schematic I Note 1 : When a EN60747-5-5 approved type is needed, CC V CC please designate Option(V4) 6 I F Tr1 1 Truth Table I O V F Input LED Tr1 Tr2 Output V O 3 Tr2 5 H ON OFF ON L L OFF ON OFF H GND 4 SHIELD Construction Mechanical Rating A bypass capacitor of 0.1 F must be Creepage Distance: 5.0mm (min) connected between pins 6 and 4. Clearance: 5.0mm (min) Insulation Thickness: 0.4mm (min) Start of commercial production 2008-07 1 2017-05-26 4.55 0.15 2.1 0.1 0.1 0.15 TLP116A Absolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 85 C) I / C 0.5 mA/C F Peak transient forward current (Note 1) I 1 A FPT Reverse voltage V 5 V R Input power dissipation PD 40 mW Input power dissipation derating (Ta 85 C) PD/C -1.0 mW/C Output current I 10 mA O Output current derating (Ta 85 C) IO/C -0.25 mA/C Output voltage V 6 V O Supply voltage V 6 V CC Output power dissipation P 40 mW O Operating temperature range Topr 40 to 100 C Storage temperature range Tstg 55 to 125 C Lead solder temperature(10 s) Tsol 260 C Isolation voltage (AC,60 s, R.H. 60%) (N ote 2) BVs 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges P.lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and M)et hoadsnd individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Pulse width PW 1s, 300 pps. Note 2 :This device is regarded as a two terminal device : pins 1 and 3 are shorted together, as are pins 4,5 and 6. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current ON I 8 18 mA F(ON) Input voltage , OFF V 0 0.8 V F(OFF) Supply voltage V 4.5 5.0 5.5 V CC Operating temperature Topr -40 100 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note: The detector of this product requires a power supply voltage (V ) of 4.5 V or higher for stable operation. CC If the V is lower than this value, an I may increase, or an output may be unstable. CC CC Be sure to use the product after checking the supply current, and the operation of a power-on/-off. Correlation between Input current, switching speed and drive circuit (reference information). Input current Test Circuit Typical switching speed (IF) 1 12mA 21 to 23 MBd (Page 4) 1 8mA 18 to 20 MBd (Page 4) 2 8mA 23 to 27 MBd (Page 4, With Speed up capacitor) 2 2017-05-26 LED DETECTOR
