TLP559(IGM) TOSHIBA Photocoupler IRED & Photo IC TLP559(IGM) Transistor Inverters Unit: mm Air Conditioner Inverters Line Receivers Intelligent Power Modules (IPMs) Interfaces The TOSHIBA TLP559(IGM) consists of a high-output infrared emitting diode optically coupled to a high-speed photodiode with a transistor amplifier. The TLP559(IGM) has no internal base connection. The Faraday shield in the photodetector chip provides an effective common-mode noise transient immunity. The TLP559(IGM) guarantees minimum and maximum propagation delay time, a relative time difference between the rise and fall time, and common- mode transient immunity. Therefore, the TLP559(IGM) is suitable for an isolation interface between an Intelligent Power Module (IPM) and a control IC in motor control applications. Isolation Voltage: 2500 Vrms (min) TOSHIBA 11 10C4S Common-Mode Transient Immunity: 10 kV/ s (min) V = 1500 V CM p p Weight: 0.54 g (typ.) Switching Time: t t = 0.1 s (min), = 0.8 s (max) pHL, pLH I = 10 mA, V = 15 V, R = 20 k , Ta = 25C F CC L Switching Time Dispersion: 0.7 s (max) ( tpLHtpHL ) TTL Compatible UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configuration (Top view) Schematic 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: Emitter (GND) 6: Collector (Output) 7: N.C. 8: V CC Start of commercial production 1995-01 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP559(IGM) Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Note 1) I 25 mA F Pulse Forward Current (Note 2) I 50 mA FP Peak Transient Forward Current (Note 3) I 1 A FPT Reverse Voltage V 5 V R Diode Power Dissipation (Note 4) P 45 mW D Output Current I 8 mA O Peak Output Current I 16 mA OP Output Voltage V 0.5 to 20 V O Supply Voltage V 0.5 to 30 V CC Output Power Dissipation (Note 5) P 100 mW O Operating Temperature Range T 55 to 100 C opr Storage Temperature Range T 55 to 125 stg C Lead Solder Temperature(10 s) (Note 6) T 260 sol C Isolation Voltage(AC, 60 s, R.H. 60 %) (Note 7) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8 mA above 70 C. (Note 2) 50 % duty cycle, 1 ms pulse width. Derate 1.6 mA/C above 70 C. (Note 3) Pulse width PW 1 s, 300 pps. (Note 4) Derate 0.9 mW/C above 70C. (Note 5) Derate 2 mW/C above 70C. (Note 6) Soldering portion of lead : up to 2mm from the body of the device. (Note 7) Device considers a two-terminal device : pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation DETECTOR LED