TLP700 TOSHIBA Photocoupler IRED + Photo IC TLP700 Industrial inverters Inverter for air conditioners Unit: mm 4.580.25 IGBT/Power MOSFET gate drive 6 5 4 TLP700 consists of an infrared LED and an integrated photodetector. This unit is 6-lead SDIP package. The TLP700 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP700 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP700 is capable of direct gate 1 2 3 driving of low-power IGBTs. 7.620.25 Peak output current: 2.0 A (max) Guaranteed performance over temperature: -40 to 100C Supply current: 2.0 mA (max) 1.270.2 1.250.25 Power supply voltage: 15 to 30 V 0.40.1 9.70.3 Threshold input current: I = 5 mA (max) FLH Switching time (t / t ): 500 ns (max) pLH pHL Common mode transient immunity: 15 kV/ s (min) TOSHIBA 11-5J1S Isolation voltage: 5000 Vrms (min) Weight: 0.26 g (typ.) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configuration (Top View) VDE-approved: EN 60747-5-5 , EN 62368-1 (Note 1) 1: ANODE 1 6 2: N.C 3: CATHODE 2 5 4: GND Note 1 : When a VDE approved type is needed, 5: V ( OUTPUT ) O please designate the Option(D4). 6: V 4 CC 3 SHIELD Schematic I CC V CC Truth Table (M1) 6 I F Input LED M1 M2 Output 1 I H ON ON OFF H O V F (M2) OFF OFF ON L 3 V L O 5 GND SHIELD 4 Note: A 0.1- F bypass capacitor must be connected between pins 6 and 4. Start of commercial production 2007-08 2019 1 2019-09-25 Toshiba Electronic Devices & Storage Corporation +0.15 3.65 6.80.25 -0.25 +0.10 0.25 -0.05 +0.25 4.0 -0.20 TLP700 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 85C) I / Ta -0.54 mA/C F Peak transient forward current (Note 1) I 1 A FP Reverse voltage V 5 V R Diode power dissipation P 40 mW D Diode power dissipation derating (Ta 85 C) P / Ta -1.0 mW/C D Junction temperature T 125 C j H peak output current I -2.0 A Ta=-40 to 100 C OPH (Note 2) L peak output current I 2.0 A OPL Output voltage V 35 V O Supply voltage V 35 V CC Power dissipation P 400 mW C Junction temperature T 125 C j Operating frequency (Note 3) f 50 kHz Operating temperature range T -40 to 100 C opr Storage temperature range T -55 to 125 C stg Lead soldering temperature (10 s) (Note 4) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 5) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Note 1: Pulse width P 1 s, 300 pps W Note 2: Exponential waveform pulse width P 0.3 s, f 15 kHz W Note 3: Exponential waveform I -1.5 A ( 0.3 s), I +1.5 A ( 0.3 s), Ta = 100 C OPH OPL Note 4: For the effective lead soldering area Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Input current, ON (Note 1) I 7.5 10 mA F (ON) Input voltage, OFF VF (OFF) 0 0.8 V Supply voltage (Note 2)(Note 3) V 15 30 V CC Peak output current I / I 1.5 A OPH OPL Operating temperature T -40 100 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: Input signal rise time (fall time) 0.5 s. Note 2: This item denotes operating ranges, not meaning of recommended operating conditions. Note 3: If the V rise slope is sharp, an internal circuit might not operate with stability. Please design the V rise CC CC slope under 3.0 V/ s. 2019 2 2019-09-25 Toshiba Electronic Devices & Storage Corporation Detector LED