TPN6R303NC MOSFETs Silicon N-channel MOS (U-MOS) TPN6R303NCTPN6R303NCTPN6R303NCTPN6R303NC 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small, thin package (2) Low drain-source on-resistance: R = 5.2 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (4) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1) I 43 A D Drain current (DC) (Note 1) I 20 D Drain current (pulsed) (1 ms) (Note 1) I 107 DP Power dissipation (T = 25) P 19 W c D Power dissipation (t = 10 s) (Note 2) P 1.9 D Power dissipation (t = 10 s) (Note 3) P 0.7 D Single-pulse avalanche energy (Note 4) E 51 mJ AS Avalanche current I 20 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-09 2014-02-18 1 Rev.2.0TPN6R303NC 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 6.57 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 2) R 65.7 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 178 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: V = 24 V, T = 25 (initial), L = 0.099 mH, I = 20 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-18 2 Rev.2.0