TP65H150G4LSG Transphorm

TP65H150G4LSG 650V SuperGaN GaN FET in PQFN (source tab) Description Features The TP65H150G4LSG 650V, 150m Gallium Nitride (GaN) Gen IV technology FET is a normally-off device. It combines state-of-the-art high JEDEC-qualified GaN technology voltage GaN HEMT and low voltage silicon MOSFET Dynamic RDS(on)eff production tested technologiesoffering superior reliability and performance. Robust design, defined by Wide gate safety margin The Gen IV SuperGaN platform uses advanced epi and Transient over-voltage capability patented design technologies to simplify manufacturability Very low Q RR while improving efficiency over silicon via lower gate charge, Reduced crossover loss output capacitance, crossover loss, and reverse recovery RoHS compliant and Halogen-free packaging charge. Benefits Related Literature Achieves increased efficiency in both hard- and soft- AN0003: Printed Circuit Board Layout and Probing switched circuits AN0007: Recommendations for Vapor Phase Reflow Increased power density AN0009: Recommended External Circuitry for GaN FETs Reduced system size and weight AN0012: PQFN Tape and Reel Information Overall lower system cost Easy to drive with commonly-used gate drivers GSD pin layout improves high speed design Product Series and Ordering Information Applications Package Part Number Package Configuration Consumer Power adapters * TP65H150G4LSG-TR 8x8 PQFN Source Low power SMPS * -TR suffix refers to tape and reel. Refer to AN0012 for details. Lighting TP65H150G4LSG PQFN (top view) Key Specifications S V (V) min 650 DS V (V) max 800 DSS(TR) R (m ) max* 180 DS(on) D Q (nC) typ 40 RR G Q (nC) typ 8 G * Dynamic RDS(on) see Figures 18 and 19 Cascode Schematic Symbol Cascode Device Structure Dec. 24, 2021 2019 Transphorm Inc. Subject to change without notice. TP65H150G4LSG Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit V Drain to source voltage (T = -55C to 150C) 650 DSS J a VDSS(TR) Transient drain to source voltage 800 V VGSS Gate to source voltage 20 P Maximum power dissipation T =25C 52 W D C b Continuous drain current T =25C 13 A C ID b Continuous drain current T =100C 8.4 A C IDM Pulsed drain current (pulse width: 10s) 60 A TC Case -55 to +150 C Operating temperature T Junction -55 to +150 C J TS Storage temperature -55 to +150 C c T Reflow soldering temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30 s. Nonrepetitive. b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Reflow MSL3 Thermal Resistance Symbol Parameter Typical Unit RJC Junction-to-case 2.4 C/W d R Junction-to-ambient 50 C/W JA Notes: 2 d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm copper area and 70m thickness) Dev. 24, 2021 transphormusa.com tp65h150g4lsg.1 2