X-On Electronics has gained recognition as a prominent supplier of 2N2222ACSM Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2222ACSM Bipolar Transistors - BJT are a product manufactured by TT Electronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2222ACSM TT Electronics

2N2222ACSM electronic component of TT Electronics
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Part No.2N2222ACSM
Manufacturer: TT Electronics
Category: Bipolar Transistors - BJT
Description: Semelab TT Electronics Bipolar Transistors - BJT NPN TRANSISTOR
Datasheet: 2N2222ACSM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 100
Multiples : 1
100 : USD 20.8656
250 : USD 20.6514
500 : USD 20.4498
1000 : USD 20.2356
2000 : USD 20.034
2500 : USD 19.8324
3000 : USD 19.6434
5000 : USD 19.4418
10000 : USD 19.2528
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 25.8733
10 : USD 22.6349
25 : USD 20.4458
50 : USD 17.8732
100 : USD 17.6137
300 : USD 16.5079
500 : USD 16.1017
N/A

Obsolete
0
MOQ : 4
Multiples : 1
4 : USD 14.7419
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N2222ACSM from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2222ACSM and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SSSSIIIILLLLIIIICCCCOOOONNNN SSSSWWWWIIIITTTTCCCCHHHHIIIINNNNGGGG NNNNPPPPNNNN TTTTRRRRAAAANNNNSSSSIIIISSSSTTTTOOOORRRR 2N2222ACSM High Speed Saturated Switching Hermetic Ceramic Surface Mount Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Collector Base Voltage 75V CBO V Collector Emitter Voltage 40V CEO V Emitter Base Voltage 6V EBO I Continuous Collector Current 0.8A C P T = 25C Total Power Dissipation at 500mW D A Derate Above 25C 2.86mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters Max. Units R Thermal Resistance, Junction To Ambient 350 C/W JA Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: 3391 Issue: 5 Telephone: +44 (0) 1455 556565 Email: sales semelab-tt.com Website: SSSSIIIILLLLIIIICCCCOOOONNNN SSSSWWWWIIIITTTTCCCCHHHHIIIINNNNGGGG NNNNPPPPNNNN TTTTRRRRAAAANNNNSSSSIIIISSSSTTTTOOOORRRR 2N2222ACSM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ. Max. Units (1) Collector-Emitter V I = 10mA 40 (BR)CEO C Breakdown Voltage Collector-Base V I = 10A 75 V (BR)CBO C Breakdown Voltage Emitter-Base V I = 10A 6 (BR)EBO E Breakdown Voltage Collector-Emitter I V = 3V V = 60V 10 CEX EB CE Cut-Off Current nA I = 0 V = 60V 10 E CB Collector-Base I CBO Cut-Off Current T = 150C 10 A A I I = 0 V = 3V Emitter Cut-Off Current 10 nA EBO C EB I = 150mA I = 15mA 0.3 C B (1) Collector-Emitter V CE(Sat) Saturation Voltage I = 500mA I = 50mA 1.0 C B V I = 150mA I = 15mA 0.6 1.2 C B (1) Base-Emitter V BE(Sat) Saturation Voltage I = 500mA I = 50mA 2.0 C B I = 0.1mA V = 10V 35 C CE I = 1.0mA V = 10V 50 C CE I = 10mA V = 10V 75 C CE (1) h T = -55C DC Current Gain 35 - FE A I = 150mA V = 10V 100 300 C CE I = 150mA V = 1.0V 50 C CE I = 500mA V = 10V 40 C CE DYNAMIC CHARACTERISTICS C V = 10V I = 0 Output Capacitance f = 1.0MHz 8 obo CB E pF C V = 0.5V I = 0 Input Capacitance f = 1.0MHz 30 ibo EB C f I = 20mA V = 20V Transition Frequency f = 100MHz 300 MHz t C CE I = 1.0mA V = 10V f = 1.0kHz 50 300 C CE h Small Signal Current Gain - fe I = 10mA V = 10V f = 1.0kHz 75 375 C CE t V = 30V V = 0.5V Delay Time 10 d CC BE t I = 150mA I = 15mA Rise Time 25 r C B1 ns t V = 30V Storage Time VBE = 0.5V 225 s CC t I = 150mA I = I = 15mA Fall Time 60 f C B1 B2 Note (1) Pulse Width 380s, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Email: sales semelab-tt.com Website:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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