2N2222ACSM TT Electronics

SSSSIIIILLLLIIIICCCCOOOONNNN SSSSWWWWIIIITTTTCCCCHHHHIIIINNNNGGGG NNNNPPPPNNNN TTTTRRRRAAAANNNNSSSSIIIISSSSTTTTOOOORRRR 2N2222ACSM High Speed Saturated Switching Hermetic Ceramic Surface Mount Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Collector Base Voltage 75V CBO V Collector Emitter Voltage 40V CEO V Emitter Base Voltage 6V EBO I Continuous Collector Current 0.8A C P T = 25C Total Power Dissipation at 500mW D A Derate Above 25C 2.86mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters Max. Units R Thermal Resistance, Junction To Ambient 350 C/W JA Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: 3391 Issue: 5 Telephone: +44 (0) 1455 556565 Email: sales semelab-tt.com Website: SSSSIIIILLLLIIIICCCCOOOONNNN SSSSWWWWIIIITTTTCCCCHHHHIIIINNNNGGGG NNNNPPPPNNNN TTTTRRRRAAAANNNNSSSSIIIISSSSTTTTOOOORRRR 2N2222ACSM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ. Max. Units (1) Collector-Emitter V I = 10mA 40 (BR)CEO C Breakdown Voltage Collector-Base V I = 10A 75 V (BR)CBO C Breakdown Voltage Emitter-Base V I = 10A 6 (BR)EBO E Breakdown Voltage Collector-Emitter I V = 3V V = 60V 10 CEX EB CE Cut-Off Current nA I = 0 V = 60V 10 E CB Collector-Base I CBO Cut-Off Current T = 150C 10 A A I I = 0 V = 3V Emitter Cut-Off Current 10 nA EBO C EB I = 150mA I = 15mA 0.3 C B (1) Collector-Emitter V CE(Sat) Saturation Voltage I = 500mA I = 50mA 1.0 C B V I = 150mA I = 15mA 0.6 1.2 C B (1) Base-Emitter V BE(Sat) Saturation Voltage I = 500mA I = 50mA 2.0 C B I = 0.1mA V = 10V 35 C CE I = 1.0mA V = 10V 50 C CE I = 10mA V = 10V 75 C CE (1) h T = -55C DC Current Gain 35 - FE A I = 150mA V = 10V 100 300 C CE I = 150mA V = 1.0V 50 C CE I = 500mA V = 10V 40 C CE DYNAMIC CHARACTERISTICS C V = 10V I = 0 Output Capacitance f = 1.0MHz 8 obo CB E pF C V = 0.5V I = 0 Input Capacitance f = 1.0MHz 30 ibo EB C f I = 20mA V = 20V Transition Frequency f = 100MHz 300 MHz t C CE I = 1.0mA V = 10V f = 1.0kHz 50 300 C CE h Small Signal Current Gain - fe I = 10mA V = 10V f = 1.0kHz 75 375 C CE t V = 30V V = 0.5V Delay Time 10 d CC BE t I = 150mA I = 15mA Rise Time 25 r C B1 ns t V = 30V Storage Time VBE = 0.5V 225 s CC t I = 150mA I = I = 15mA Fall Time 60 f C B1 B2 Note (1) Pulse Width 380s, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Email: sales semelab-tt.com Website: