SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Collector Base Voltage -60V CBO V Collector Emitter Voltage -60V CEO V Emitter Base Voltage -5V EBO I Continuous Collector Current -600mA C P T = 25C Total Power Dissipation at 500mW D A Derate Above 37.5C 3.08mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES (Each Device) Symbols Parameters Min. Typ. Max. Units R Thermal Resistance, Junction To Ambient 325 C/W JA Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 3508 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ Max. Units (1) Collector-Emitter V I = -10mA I = 0 -60 V (BR)CEO C B Breakdown Voltage V = -60V I = 0 -10 A CB E I V = -50V I = 0 Collector Cut-Off Current -10 nA CBO CB E T = 150C -10 A A V = -5V I = 0 -10 A EB C I Emitter Cut-Off Current EBO V = -4V I = 0 -50 nA EB C I V = -50V Collector Cut-Off Current -50 nA CES CE I = -150mA I = -15mA -0.4 C B (1) Collector-Emitter Saturation V CE(sat) Voltage I = -500mA I = -50mA -1.6 C B V I = -150mA I = -15mA -0.6 -1.3 C B (1) Base-Emitter Saturation V BE(sat) Voltage I = -500mA I = -50mA -2.6 C B I = -0.1mA V = -10V 75 C CE I = -1.0mA V = -10V 100 450 C CE I = -10mA V = -10V 100 C CE (1) Forward-current transfer h FE ratio T = -55C 50 A I = -150mA V = -10V 100 300 C CE I = -500mA V = -10V 50 C CE DYNAMIC CHARACTERISTICS I = -20mA V = -20V C CE Small signal forward-current h 2 fe transfer ratio f = 100MHz I = -1.0mA V = -10V C CE h Small Signal Current Gain 100 fe f = 1.0KHz V = -10V I = 0 CB E C Output Capacitance 8 obo f = 1.0MHz pF V = -2V I = 0 EB C C Input Capacitance 30 ibo f = 1.0MHz I = -150mA V = -30V C CC t Turn-On Time 45 on I = -15mA B1 ns I = -150mA V = -30V C CC t Turn-Off Time 300 off I = - I = -15mA B1 B2 NNNNooootttteeeessss (1) Pulse Width 300us, 2% SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 3508 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: