Surface Mount NP General Purpose Transistor 2N2907AUB (TX, TXV) Features: Ceramic 3 pin surface mount package (UBN) Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 package transistors Processed per MIL-PRF-19500/291 Description: The 2N2907AUB, 2N2907AUBTX and 2N2907AUBTXV are miniature, hermetically sealed, ceramic surface mount general purpose switching transistors. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT -23 devices have been used. The UB suffix denotes the 3 terminal chip carrier package, type B per MIL-PRF-19500/291. Typical screening and lot acceptance tests per MIL-PRF-19500/291. The burn-in condition is V = 30 V, P = 200 mW, T = 25C, t = 80 hrs. CB D A Refer to MIL-PRF-19500/291 for complete requirements. In addition, the TX and TXV versions receive 100% thermal response testing. Applications: General switching Amplificaonti Signal processing Radio transmission Logic gates Pin Function 1 Base 2 Emitter 3 Collector General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 2900 E. Plano Pkwy, Plano, TX 75074 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue D 08/2016 Page 1 TT electronics plc Surface Mount PNP General Purpose Transistor 2N2907AUB (TX, TXV) Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Collector-Base Voltage 60V Collector-Emitter Voltage 60V Emitter -Base Voltage 5.0V Collector Current-Continuous 600mA Operating Junction Temperature (T ) -65 C to +200 C J Storage Junction Temperature (T ) -65 C to +200 C stg Power Dissipation T = 25C 0.5 W A (1) Power Dissipation Tc = 25 C 1.00 W Soldering Temperature (vapor phase reflow for 30 seconds) 215 C Soldering Temperature (heated collet for 5 seconds) 260 C Electrical Characteriscti s (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS V Collector-Base Breakdown Voltage 60 - V I = 10 A, I = 0 (BR)CBO C E (2) V Collector-Emitter Breakdown Voltage 60 - V I = 10 mA, I = 0 (BR)CEO C B V Emitter -Base Breakdown Voltage 5.0 - V I = 10 A, I = 0 (BR)EBO E C 10 A V = 50 V, I = 0 CB E I Collector-Base Cuto Cuff rrent CBO 10 A V = 50 V, I = 0, T = 150 C CB E A I Emitter -Base Cuto Cuff rrent 10 A V = 4.0 V, I = 0 EBO CE C I Collector Emitter Cuto ff Current 10 nA V = 50 V CES EB ON CHARACTERISTICS 75 - V = 10 V, I = 0.1 mA CE C 100 450 - V = 10 V, I = 1.0 mA CE C 100 - V = 10 V, I = 10 mA CE C h Forward-Current Transfer Ratio FE (2) 100 300 - V = 10 V, I = 150 mA CE C (2) 50 - V = 10 V, I = 500 mA CE C 50 - V = 10 V, I = 1.0 mA, T = -55C CE C A Note: 1. Derate linearly 6.6 mW/C above 25 C 2. Pulse Width 300 s, Duty Cycle 2.0% General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 2900 E. Plano Pkwy, Plano, TX 75074 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue D 08/2016 Page 2 TT electronics plc