SILICON PNP TRANSISTOR 2N3963 General Purpose PNP Silicon Transistor Low Power Amplifier Applications Hermetic TO18 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C V Collector Base Voltage -80V CBO V Collector Emitter Voltage -80V CEO V Emitter Base Voltage -6V EBO I Continuous Collector Current -200mA C P T = 25C Total Power Dissipation at 0.36W D A Derate Above 25C 2.06mW/C T = 25C 1.2W C Derate Above 25C 6.86mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Unit R Thermal Resistance, Junction To Ambient 486 C/W JA R Thermal Resistance, Junction To Case 146 C/W JC Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8779 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON PNP TRANSISTOR 2N3963 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ. Max. Unit Collector-Base V I = -10A -80 V (BR)CBO C Breakdown Voltage Collector-Emitter V I = -5mA -80 V (BR)CEO C Breakdown Voltage Collector-Emitter V I = -10A -80 V (BR)CES C Breakdown Voltage Emitter - Base V I = -10A -6 V (BR)EBO E Breakdown Voltage I V = -70V Collector Cut-Off Current -10 CBO CB I V = -70V Collector Cut-Off Current -10 nA CES CE I V = -4V Emitter Cut-Off Current -10 EBO EB I = -10A V = -5V 100 300 C CE -55C 40 I = -100A V = -5V 100 C CE h I = -1.0mA V = -5V DC Current Gain 100 450 FE C CE 100C 600 (1) I = -50mA V = -5V 90 C CE -55C 45 I = -10mA I = -0.5mA -0.25 C B (1) Collector-Emitter V CE(sat) Saturation Voltage I = -50mA I = -5.0mA -0.4 C B V I = -10mA I = -0.5mA -0.9 C B (1) Base-Emitter V BE(sat) Saturation Voltage I = -50mA I = -5.0mA -0.95 C B DYNAMIC CHARACTERISTICS I = 1.0mA V = -5.0V C CE h Small-Signal Current Gain 100 550 fe f = 1.0KHz Magnitude of Forward Current I = -0.5mA V = -5.0V C CE h Transfer Ratio, 2.0 8.0 fe f = 20MHz Common-Emitter C V = -5.0V Output Capacitance f = 1.0MHz 6 pF obo CB C V = -0.5V Input Capacitance f = 1.0MHz 15 pF ibo EB NNootteess NNootteess (1) Pulse Width 300us, 2% SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8779 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: