2N4036 TT Electronics

2N4036 MECHANICAL DATA HIGH SPEED Dimensions in mm (inches) MEDIUM VOLTAGE SWITCHES 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 5.08 (0.200) 8.51 (0.335) DESCRIPTION typ. The 2N4036 is a silicon expitaxial planar 4.19 (0.165) 4.95 (0.195) 2.54 2 (0.100) PNP transistors in jedec TO-39 metal case 1 3 0.66 (0.026) intended for use in switching applications. 0.89 max. 1.14 (0.045) (0.035) 12.70 0.71 (0.028) (0.500) min. 7.75 (0.305) 0.86 (0.034) 8.51 (0.335) dia. 45 TO-39 Pin 1 Emitter Pin 2 Base Pin 3 Collector ABSOLUTE MAXIMUM RATINGS T = 25c unless otherwise stated 2N4036 CASE -90V V Collector Base Voltage (I = 0) CBO E -85V V Collector Emitter Voltage (V = 1.5V) CEX BE -6V V Emitter Base Voltage (I = 0) EBO C -1A I Continuous Collector Current C 0.5 I Base Current B 1 P Total Dissipation at T 25C tot amb 7 T 25C case 65 to +200C T Operating and Storage Temperature Range stg 200C T Junction temperature j Prelim. 7/98 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales semelab.co.uk Website 2N4036 THERMAL DATA R 25 Thermal Resistance Junction-case Max C/W thj-case R 175 Thermal Resistance Junction-ambient Max C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit nA I Collector Cut Off Current V = -60V I = 0 -20 CBO CB E m A I Collector Cut Off Current V = -30V I = 0 -0.5 CEO CE B nA I Emitter Cut Off Current V = -5V I = 0 -20 EBO EB C V V Collector Emitter Saturation Voltage I = -150mA I = -15mAV -0.65 CE(sat) C B V V Base Emitter Saturation Voltage I = -150mA V = -10V -1.1 BE C CE V V Collector Base Breakdown Voltage I = -100mAI = 0 -90 (BR)CBO C E V V Collector Emitter Breakdown Voltage I = -10mA V = 1.5V -85 (BR)CEX C BE V V Collector Emitter Breakdown Voltage I = -10mA R = 200W -85 (BR)CER C BE V V Collector Emitter Breakdown Voltage I = -10mA I = 0 -65 (BR)CEO C B V Emitter Base Breakdown Voltage I = 0 I = -100m A -7 (BR)EBO C E I = -0.1mA V = -10V 20 C CE h DC Current Gain I = -150mA V = -10V 40 140 FE C CE I = -500mA V = -10V 20 C CE I = -50mA V = -10v C CE MHz f Transistiion Frequency 60 T f = 20MHz I = 0 V = -0.5V E CB pF C Emitter Base Capacitance 90 EBO f = 1MHz I = 0 V = -10V E CB pF C Collector Base Capacitance 30 CBO f = 1MHz I = -150mA V = -30V C CC ns t Turn On Time 110 on I = -15mA B1 I = -150mA V = -30V C CC ns t Turn Off Time 700 off I =-I = 15mA B1 B2 * Pulse test t = 300m s , d = 1% p Prelim. 7/98 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales semelab.co.uk Website