HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise stated) A V Collector Base Voltage -15V CBO V Collector Emitter Voltage -15V CEO V Emitter Base Voltage -4.5V EBO I Continuous Collector Current -50mA C P T = 25 C Total Power Dissipation at 360mW D A Derate Above 25 C 2.05mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbol Parameter Max Units R Thermal Resistance Junction to Ambient 250 C/W JA R Thermal Resistance, Junction To Solder Pads T = 25C 160 C/W JSP(IN) SP Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing an order. SSeemmeellaabb LLiimmiitteedd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9422 SSeemmeellaabb LLiimmiitteedd Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Issue 3 Email: sales semelab-tt.com Website: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise stated) A Symbols Parameters Test Conditions Min Typ Max Units (1) V I = -3mA Collector-Emitter Breakdown Voltage -15 (BR)CEO C V V I = -100A Collector-Emitter Breakdown Voltage -15 (BR)CES C -10 nA I V = -10V Collector-Emitter Cut-Off Current CES CE T = 125C -5.0 A A V = -4.5V -10 A EB I Emitter Cut-Off Current EBO V = -3.5V -10 nA EB I V = -15V I = 0 Collector Cut-Off Current -10 A CBO CB E I = -1.0mA V = -0.5V 35 C CE I = -10mA V = -0.3V 50 120 C CE (1) h V = -1.0V Forward-current transfer ratio 55 125 FE CE I = -10mA C T = -55C 25 A I = -50mA V = -1.0V 40 C CE I = -1.0mA I = -0.1mA -0.07 -0.15 C B (1) V I = -10mA I = -1.0mA Collector-Emitter Saturation Voltage -0.12 -0.18 V CE(sat) C B I = -50mA I = -5.0mA -0.29 -0.60 C B I = -1.0mA I = -0.1mA -0.80 C B V I = -10mA I = -1.0mA Base-Emitter Saturation Voltage -0.70 -0.95 V BE(sat) C B I = -50mA I = -5.0mA -1.50 C B DYNAMIC CHARACTERISTICS I = -10mA V = -10V C CE Small signal forward current h 8.5 fe transfer ratio f = 100MHz C V = -5.0V I = 0 Output Capacitance f = 1.0MHz 3.0 obo CB E pF C V = 0.5V I = 0 Input Capacitance f = 1.0MHz 3.5 ibo BE C t V = -3V I = -10mA Turn-On Time 15 on CC C t Turn-Off Time 20 off ns t I = -1.0mA Turn-On Delay Time 10 d B t Rise Time 15 r NNNNooootttteeeessss (1) Pulse Width < 380s, Duty Cycle <2% SSeemmeellaabb LLiimmiitteedd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9422 SSeemmeellaabb LLiimmiitteedd Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Issue 3 Email: sales semelab-tt.com Website: