X-On Electronics has gained recognition as a prominent supplier of BDY25B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BDY25B Bipolar Transistors - BJT are a product manufactured by TT Electronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BDY25B TT Electronics

BDY25B electronic component of TT Electronics
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Part No.BDY25B
Manufacturer: TT Electronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 120pF 200 Volts 50W TRANSISTOR, BIPOLAR
Datasheet: BDY25B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 39.1608
5 : USD 38.367
10 : USD 37.1826
50 : USD 36.2628
100 : USD 35.0406
500 : USD 34.5492
1000 : USD 34.5492
2000 : USD 34.5492
5000 : USD 33.2136
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BDY25B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BDY25B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BDY25B MECHANICAL DATA HIGH CURRENT Dimensions in mm (inches) NPN SILICON TRANSISTOR 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES HIGH CURRENT FAST SWITCHING HIGH RELIABILITY SCREENING OPTIONS AVAILABLE 1 2 3 (case) 3.84 (0.151) APPLICATIONS 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) SWITCHING CIRCUITS LARGE SIGNAL/POWER AMPLIFIERS TO3 (TO204AA) Pin 1 = Base Pin 2 = Emitter Case = Collector ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise stated CASE V Collector - Base Voltage 200V CBO V Collector - Emitter Voltage 140V CEO V Emitter Base Voltage 10V EBO I Continuous Collector Current 6A C I Base Current 3A B P Total Power Dissipation at T = 25C 50W tot case Derate above 25C 0.29 W/C T Junction Temperature 200C J T Storage Temperature -65 to 200C stg Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. DOC 7596, ISSUE 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales semelab.co.uk Website: BDY25B Max Unit THERMAL CHARACTERISTICS R j-case Thermal resistance to case C/W 3.5 th ELECTRICAL CHARACTERISTICS (T =25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-Off Current V = 140V I = 0 1.0 CEO CE B I Collector Cut-Off Current V = 180V V = 0 1.0 mA CES CE BE I Emitter Cut-Off Current V = 10V I = 0 1.0 EBO EB C V * Collector-Emitter Breakdown Voltage I = 50mA I = 0 140 (BR)CEO C B V * Collector-Base Breakdown Voltage I = 3mA 200 (BR)CBO C V V * Collector-Emitter Saturation Voltage I = 2.0A I = 0.25A 0.6 CE(sat) C B V * Base-Emitter Saturation Voltage I = 2.0A I = 0.25A 1.2 BE(sat) C B I = 1.0A V = 4.0V 65 C CE h * Forward-current transfer ratio FE I = 2.0A V = 4.0V 30 45 90 C CE DYNAMIC CHARACTERISTICS I = 0 V = 10V E CB C Output Capacitance 65 120 pF obo f = 1.0MHz I = 0.5A V = 15V C CE F Transition Frequency 10 MHz T f = 10.0MHz T Turn-on time I = 5.0A I = 1.0A 0.3 0.5 on C B1 s T Turn-off time I = 5.0A I =-I = 1.0A 1.5 2.0 off C B1 B2 * Pulse test t = 300s, < 2% p Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. DOC 7596, ISSUE 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales semelab.co.uk Website:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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