BSS76 TT Electronics

BSS76 P LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) HIGH VOLTAGE 5.31 (0.209) 4.95 (0.195) PNP SILICON 4.52 (0.178) TRANSISTOR FEATURES Hermetic Metal Package Screening Options Available 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS: All Semelab hermetically sealed prod- 2.54 (0.100) Nom. ucts can be processed in accordance with the requirements of BS, CECC and JAN specifications 3 1 2 TO18 (TO-206AA) PACKAGE PIN 1 Emitter PIN 2 Base PIN 3 Collector ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C V Collector Base Voltage -300V CBO V Collector Emitter Voltage -300V CEO V Emitter Base Voltage -5V EBO I Continuous Collector Current -0.5A C P Total Device Dissipation T = 25C 0.5W D A Derate above 25C 2.86mW/C P Total Device Dissipation T = 25C 2.5W D C Derate above 25C 14.3mW/C T , T Operating Junction & Storage Temperature Range -65 to 200C J STG R Thermal Resistance, Junction Case 70C/W JC Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5747 E-mail: sales semelab.co.uk Website: BSS76 SEME LAB ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS V Collector Emitter Breakdown Voltage I = -10mA I = 0 -300 (BR)CEO C B V V Collector Base Breakdown Voltage I = -100AI = 0 -300 (BR)CBO C E V Emitter Base Breakdown Voltage I = 100AI = 0 -6 (BR)EBO E C I Collector Cut-off Current V = -250V I = 0 -50 CBO CB E nA I Collector Cut-off Current V = -300V I = 0 -500 CEO CE B I Emitter Cut-off Current V = -5V I = 0 -50 EBO BE C ON CHARACTERISTICS V = -1V I = -1mA 30 45 CE C V = -10V I = -10mA 35 50 CE C h DC Current Gain FE V = -10V I = -30mA 35 55 150 CE C V = -10V I = -100mA 40 CE C I = -10mA I = -1mA -0.15 -0.3 C B V V Collector Emitter Saturation Voltage CE(sat) I = -30mA I = -3mA -0.25 -0.4 C B I = -10mA I = -1mA -0.8 C B V V Base Emitter Saturation Voltage BE(sat) I = -30mA I = -3mA -0.9 C B DYNAMIC CHARACTERISTICS I = -20mA V = -20V C CE MHz f Current Gain Bandwidth Product 50 110 200 T f = 20MHz I = 0 V = -20V E CB C Output Capacitance 3.5 ob f = 1MHz pF I = 0 V = -0.5V C EB C Input Capacitance 45 ib f = 1MHz I = -10mA I = -50mA B1 C t TurnOn Time 100 on V = -100V CC ns I = -10mA I = -50mA B2 C t TurnOff Time 400 off V = -100V CC * Pulse Test: t 300 s , d 2%. p Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5747 E-mail: sales semelab.co.uk Website: