CHV3241-QDG United Monolithic Semiconductors

CHV3241-QDG RoHS COMPLIANT Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC In QFN package Description The CHV3241-QDG is a monolithic multifunction circuit suitable for frequency generation. It integrates an X-band push-push oscillator with frequency control (VCO) thanks to base-collector diodes, used as varactors, a K-band buffer amplifier and a divider by 512. All the active devices are internally self-biased. The circuit is fully integrated on InGaP HBT technology: 2m emitter length, via holes through the substrate and high Q passive elements. The chip is delivered in a standard 24 Leads RoHS compliant QFN4x4 package. Main Features K-band VCO & K-band buffer Prescaler/512 generating 24MHz output suitable for software frequency loop Prescaler and buffer switching capability with low pulling, for optimum efficiency Fully integrated VCO (no external Resonator) Low phase noise High temperature range High output power th 4 amplifier bias usable for power setting High frequency stability On chip self biased devices RoHS SMD package: 24L-QFN4x4 Main Characteristics Symbol Parameter Min Typ Max Unit GHz F out Specified output frequency range 24 24.125 24.25 F vco Oscillator frequency F out/2 GHz GHz IF out Output Intermediate frequency (IF) F out/1024 dBm P out Output power at F out 16 dBm Pres P Output power at (IF) 0 dBc/Hz PN SSB Phase Noise F out 100kHz -94 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions Ref. : DSCHV3241-QDG9100 -10 Apr 09 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO CHV3241-QDG Electrical Characteristics Full temperature and supply voltage range VCO & Amplifier Part Symbol Parameters Min Typ Max Unit F out Output Frequency range (Operating band) 24 24.25 GHz F vco VCO frequency F out/2 V Tune Voltage Tuning range 1 6 V T sens Tuning sensitivity 250 400 725 MHz/V F drift Temperature frequency drift rate 4 MHz/C H1 Harmonics F out -50 -40 dBc H3 Harmonics 3/2 F out -50 -40 dBc H4 Harmonics 2 F out -30 -20 dBc Pres Rj F out prescaler spurious rejection 45 65 dBc PN SSB Phase Noise F out 100KHz -94 -80 dBc/Hz VSWR Main Output (F Out) VSWR 2:1 L pull RF load pulling into 2:1 VSWR all phases 8 MHz Pull Prescaler and buffer switching pulling 12 MHz Push Bias pushing within the V tune range 250 MHz/V P out Nominal output Power on F out port 12 16 19 dBm P out V Output Power on F out port VB2=2V dBm 9 B2 2 +I Positive supply current 130 170 mA Prescaler & Buffer Part Symbol Parameters Min Typ Max Unit IF out IF Output Frequency F out/1024 GHz Pres P -3 0 dBm Output Power on 50 load Pres I Positive supply current 95 145 mA VSWR Prescaler Output (IF) VSWR on 100 2:1 General Symbol Parameters Min Typ Max Unit V Positive supply voltage: VB, V1, VB1, V2, 4.9 5 5.1 V VB2, VD I Total Positive supply current: IB1 + IB2 + 225 315 mA I1 + I2 Top Operating temperature range -40 +105 C All the parameters are specified within F out specified frequency range. Remark: The minimum and maximum values take into account the spread due to the operating temperature and process spread. These performances have been obtained with the chip in QFN package assembled on the recommended boards (ref. 97836) described in this document. These performances are highly dependent on this environment. Ref. : DSCHV3241-QDG9100 -10 Apr 09 2/14 Specifications subject to change without notice Route Dpartementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09