X-On Electronics has gained recognition as a prominent supplier of QN6101M6N MOSFETs across the USA, India, Europe, Australia, and various other global locations. QN6101M6N MOSFETs are a product manufactured by uPI Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QN6101M6N uPI Semiconductor

QN6101M6N electronic component of uPI Semiconductor
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Part No.QN6101M6N
Manufacturer: uPI Semiconductor
Category: MOSFETs
Description: MOSFET PRPAK5*6 RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.944 ea
Line Total: USD 0.94 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.944
10 : USD 0.6978
30 : USD 0.653
100 : USD 0.6083
500 : USD 0.588
1000 : USD 0.5798

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QN6101M6N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QN6101M6N and other electronic components in the MOSFETs category and beyond.

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The QN6101M6N is an electronic part manufactured by uPI Semiconductor that features a MOSFET PRPAK5*6 RoHS. It is a dual gallium nitride (GaN) enhancement-mode switching transistor that is designed to operate at high frequencies up to 8GHz. It offers very low on-resistance characteristics (10.2 milliohm typical) with fast switching, which makes it ideal for high efficiency switched mode power supplies in space constrained applications. The device is RoHS compliant, making it an environmentally friendly option. Additionally, it features a high frequency current gain, a low input capacitance, and a voltage breakdown of 700V. This makes it suitable for applications in consumer electronics, power converters, and other high-power, high-frequency switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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