The QN6101M6N is an electronic part manufactured by uPI Semiconductor that features a MOSFET PRPAK5*6 RoHS. It is a dual gallium nitride (GaN) enhancement-mode switching transistor that is designed to operate at high frequencies up to 8GHz. It offers very low on-resistance characteristics (10.2 milliohm typical) with fast switching, which makes it ideal for high efficiency switched mode power supplies in space constrained applications. The device is RoHS compliant, making it an environmentally friendly option. Additionally, it features a high frequency current gain, a low input capacitance, and a voltage breakdown of 700V. This makes it suitable for applications in consumer electronics, power converters, and other high-power, high-frequency switching applications.