X-On Electronics has gained recognition as a prominent supplier of SI2301BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2301BDS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2301BDS-T1-GE3 VBsemi Elec

Name: SI2301BDS-T1-GE3
Brand: VBsemi Elec
SKU: SI2301BDST1GE3_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2301BDS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2301BDS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	20V 5A 35mO@10V,5.1A 2.5W P Channel SOT-23 MOSFETs ROHS
Datasheet:	SI2301BDS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.1031 ea
Line Total: USD 1.03

Availability - 38
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 10 Multiples: 10
Pack Size: 10

SI2301BDS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

38

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 10
Multiples : 10

10 : USD 0.1031
100 : USD 0.0819
300 : USD 0.0614
3000 : USD 0.0458
6000 : USD 0.0409
9000 : USD 0.0385

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

5 A 5 A

Drain Source On Resistance Rdson@Vgs Id

35 mOhms @10V , 5.1A 35 mOhms @10V , 5.1A

Power Dissipation Pd

2.5 W 2.5 W

Gate Threshold Voltage Vgsth@Id

1.5 V @250uA 1.5 V @250uA

Reverse Transfer Capacitance Crss@Vds

155 pF @10V 155 pF @10V

Type

P Channel P Channel

Input Capacitance Ciss@Vds

835 pF @10V 835 pF @10V

Total Gate Charge Qg@Vgs

6.4 nC @2.5V 6.4 nC @2.5V

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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We are delighted to provide the SI2301BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2301BDS-T1-GE3 is a 20V 5A 35mO@10V, 5.1A 2.5W P Channel SOT-23 MOSFET manufactured by VBsemi Elec. It is comprised of a P-channel MOSFET junction in a 3-pin plastic package and rated for operating temperatures ranging from -40°C to +125°C. With a RDS(on) of 35mO @ 10V and an ID of 5.1A, it offers a maximum on-state drain current of 5A at 20V and a maximum power dissipation of 2.5W. This device is perfect for low voltage, high switching frequency applications. It features an ultra-low on-resistance profile and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
38 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 10 Multiples : 10	10 : USD 0.1031 100 : USD 0.0819 300 : USD 0.0614 3000 : USD 0.0458 6000 : USD 0.0409 9000 : USD 0.0385

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