X-On Electronics has gained recognition as a prominent supplier of SI2301BDS-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI2301BDS-T1-GE3 MOSFET are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI2301BDS-T1-GE3 VBsemi Elec

SI2301BDS-T1-GE3 electronic component of VBsemi Elec
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See Product Specifications
Part No.SI2301BDS-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFET
Description: 20V 5A 35mO@10V,5.1A 2.5W P Channel SOT-23 MOSFETs ROHS
Datasheet: SI2301BDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0452 ea
Line Total: USD 0.45

Availability - 44
Ship by Thu. 15 Aug to Tue. 20 Aug
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
11
Ship by Thu. 15 Aug to Tue. 20 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0466
100 : USD 0.0456
300 : USD 0.0448
1000 : USD 0.0442

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif
 
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We are delighted to provide the SI2301BDS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301BDS-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SI2301BDS-T1-GE3 is a 20V 5A 35mO@10V, 5.1A 2.5W P Channel SOT-23 MOSFET manufactured by VBsemi Elec. It is comprised of a P-channel MOSFET junction in a 3-pin plastic package and rated for operating temperatures ranging from -40°C to +125°C. With a RDS(on) of 35mO @ 10V and an ID of 5.1A, it offers a maximum on-state drain current of 5A at 20V and a maximum power dissipation of 2.5W. This device is perfect for low voltage, high switching frequency applications. It features an ultra-low on-resistance profile and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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