X-On Electronics has gained recognition as a prominent supplier of SI2302DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2302DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2302DS-T1-GE3 VBsemi Elec

Name: SI2302DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2302DST1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2302DS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2302DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	20V 6A 28mO@4.5V,5A 2.1W N Channel SOT-23-3 MOSFETs ROHS
Datasheet:	SI2302DS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.1066 ea
Line Total: USD 1.07

Availability - 737
Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ: 10 Multiples: 10
Pack Size: 10

SI2302DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

737

Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ : 10
Multiples : 10

10 : USD 0.1066
100 : USD 0.0858
300 : USD 0.0647
3000 : USD 0.0517
6000 : USD 0.0468
9000 : USD 0.0445

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

6 A 6 A

Drain Source On Resistance Rdson@Vgs Id

28 mOhms @4.5V , 5A 28 mOhms @4.5V , 5A

Power Dissipation Pd

2.1 W 2.1 W

Gate Threshold Voltage Vgsth@Id

1 V @250uA 1 V @250uA

Reverse Transfer Capacitance Crss@Vds

55 pF @10V 55 pF @10V

Type

N Channel N Channel

Input Capacitance Ciss@Vds

865 pF @10V 865 pF @10V

Total Gate Charge Qg@Vgs

8.8 nC @4.5V 8.8 nC @4.5V

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

SI2302DS-T1-GE3 Alternative Parts

We are delighted to provide the SI2302DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

ronic Co ltdThe SI2302DS-T1-GE3 is a 20V 6A 28mO@4.5V,5A 2.1W N Channel SOT-23-3 MOSFET manufactured by VBsemi Elecronic Co ltd. This device is RoHS compliant and designed for use in general purpose switching and level translation applications. It reduces switching losses in power switches, and can also be used in power converters and motor drives. The device has low on-state resistance, making it suitable for use in low voltage applications. Furthermore, the device has high switching speeds which make it ideal for use in high speed applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
737 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 10 Multiples : 10	10 : USD 0.1066 100 : USD 0.0858 300 : USD 0.0647 3000 : USD 0.0517 6000 : USD 0.0468 9000 : USD 0.0445

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