The VBE1101N is a MOSFET N Channel with 100V, 85A (Tc) breakdown voltage, 3V@250uA gate trigger voltage, 10mO on-state resistance at 30A, and 10V package featuring an TO252 form factor manufactured by VBsemi Elec. It is compliant with RoHS regulations, which limits hazardous and toxic materials in electrical and electronic products. The device features low gate capacitance, and is suitable for DC/DC converters, motor drivers, and load switches.