X-On Electronics has gained recognition as a prominent supplier of VBE1101N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE1101N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBE1101N VBsemi Elec

Name: VBE1101N
Brand: VBsemi Elec
SKU: VBE1101N_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBE1101N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBE1101N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 100V 85A(Tc) 3V @ 250uA 10mO @ 30A,10V TO252 RoHS
Datasheet:	VBE1101N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.6943 ea
Line Total: USD 1.69

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBE1101N More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 12 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 1.6943 10 : USD 1.3853 30 : USD 0.9484 100 : USD 0.8301 500 : USD 0.678 1000 : USD 0.6423

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO252 TO252
Brand Category Vbsemi Elec Vbsemi Elec
Fet Type NChannel NChannel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 85 A (T C) 85 A (T C)
Vgsth Max @ Id 3V @ 250uA 3V @ 250uA
Rds On Max @ Id Vgs 10mO @ 30A,10V 10mO @ 30A,10V
Power Dissipation-Max Ta 25°C 3.25 W 3.25 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 85 A 85 A
Drain Source On Resistance Rdson@Vgs Id 10 mOhms @10V , 30A 10 mOhms @10V , 30A
Power Dissipation Pd 3.25 W 3.25 W
Gate Threshold Voltage Vgsth@Id 3 V @250uA 3 V @250uA
Type N Channel N Channel

We are delighted to provide the VBE1101N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE1101N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE1101N is a MOSFET N Channel with 100V, 85A (Tc) breakdown voltage, 3V@250uA gate trigger voltage, 10mO on-state resistance at 30A, and 10V package featuring an TO252 form factor manufactured by VBsemi Elec. It is compliant with RoHS regulations, which limits hazardous and toxic materials in electrical and electronic products. The device features low gate capacitance, and is suitable for DC/DC converters, motor drivers, and load switches.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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