X-On Electronics has gained recognition as a prominent supplier of VBE1106N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE1106N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBE1106N VBsemi Elec

Name: VBE1106N
Brand: VBsemi Elec
SKU: VBE1106N_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBE1106N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBE1106N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 100V 25A 1.6V @ 250uA 62 mÎ© @ 8A,4.5V TO-252 RoHS
Datasheet:	VBE1106N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5722 ea
Line Total: USD 0.57

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBE1106N More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 0.5722 10 : USD 0.5575 30 : USD 0.5502 100 : USD 0.417

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Brand Vbsemi Elec Vbsemi Elec
Rohs Y Y
Package TO - 252 TO - 252
Fet Type N Channel N Channel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 25 A 25 A
Vgsth Max @ Id 1.6V @ 250uA 1.6V @ 250uA
Rds On Max @ Id Vgs 62mO @ 8A,4.5V 62mO @ 8A,4.5V
Power Dissipation-Max Ta 25°C 83 W 83 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 25 A 25 A
Drain Source On Resistance Rdson@Vgs Id 62 mOhms @4.5V , 8A 62 mOhms @4.5V , 8A
Power Dissipation Pd 83 W 83 W
Gate Threshold Voltage Vgsth@Id 1.6 V @250uA 1.6 V @250uA
Type N Channel N Channel

We are delighted to provide the VBE1106N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE1106N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE1106N is a MOSFET N Trench 100V 25A 1.6V @ 250uA 62 mÎ© @ 8A, 4.5V TO-252 RoHS manufactured by VBsemi Elec. This is an integrated circuit designed to provide efficient and reliable power switching functions in various applications such as power management and safety controls. It features an optimized gate charge, low on-state resistance, fast switching, low gate voltage drive and soft turn-on. It operates at a maximum drain voltage (VDS) of 100V and a maximum drain current (ID) of 25A. It is also designed with a low gate voltage (VGS) of 1.6V @ 250uA, and a low drain-source on-state resistance (RDS) of 62 mÎ© @ 8A. It is housed in a standard TO-252 RoHS package with four leads for easy mounting and secure connection.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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