X-On Electronics has gained recognition as a prominent supplier of 1N4148WS-G3-18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4148WS-G3-18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4148WS-G3-18 Vishay

1N4148WS-G3-18 electronic component of Vishay
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Part No.1N4148WS-G3-18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 100 Volt 350mA 4ns
Datasheet: 1N4148WS-G3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0496 ea
Line Total: USD 496 
Availability - 9700
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
9700
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0496
20000 : USD 0.0387

7763
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1253
10 : USD 0.0763
25 : USD 0.0754
100 : USD 0.0712
250 : USD 0.067
500 : USD 0.0628
1000 : USD 0.0585
3000 : USD 0.0544
6000 : USD 0.0501

3807
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1243
50 : USD 0.1052
150 : USD 0.0958
500 : USD 0.0888
2500 : USD 0.0727
5000 : USD 0.0698

12580
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1949
10 : USD 0.1261
100 : USD 0.0702
1000 : USD 0.0572
2500 : USD 0.0493
10000 : USD 0.0429
20000 : USD 0.039

9700
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0512
20000 : USD 0.04

6984
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 893
Multiples : 1
893 : USD 0.0555
1000 : USD 0.0553
2000 : USD 0.05

7763
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 223
Multiples : 1
223 : USD 0.0736
250 : USD 0.0692
500 : USD 0.0648
1000 : USD 0.0605
3000 : USD 0.0561
6000 : USD 0.0517

   
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We are delighted to provide the 1N4148WS-G3-18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4148WS-G3-18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1N4148WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q101 qualified available Base P/N-HG3 - green, AEC-Q101 qualfied Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see MARKING (example only) www.vishay.com/doc 99912 MECHANICAL DATA X Y Case: SOD-323 22610 Weight: approx. 4 mg Bar = cathode marking Packaging codes / options: XY = type code 18/10K per 13 reel (8 mm tape), 10K/box DESIGN SUPPORT TOOLS click logo to get started 08/3K per 7 reel (8 mm tape), 15K/box Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4148WS-G 1N4148WS-G3-08 or 1N4148WS-G3-18 Single AH Tape and reel 1N4148WS-HG 1N4148WS-HG3-08 or 1N4148WS-HG3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 R V Repetitive peak reverse voltage V 100 RRM Average rectified current half wave rectification f 50 Hz I 150 F(AV) (1) with resistive load mA Surge forward current t < 1 s and T = 25 C I 350 j FSM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.4, 31-Jan-18 Document Number: 85413 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910001N4148WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 1V F F Forward voltage I = 100 mA V 1.2 V F F V = 20 V I 25 nA R R V = 75 V I 5 R R Leakage current V = 100 V I 100 A R R V = 20 V, T = 150 C I 50 R j R Diode capacitance V = V = 0 V C 4pF F R D Tested with 50 mA pulses, Voltage rise when switching ON t = 0.1 s, rise time < 30 ns, V 2.5 V p fr f = (5 to 100) kHz p I = 10 mA, i = 1 mA, V = 6 V, F R R Reverse recovery time t 4ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3 250 10 200 2 10 T = 100 C T = 25 C j j 150 10 100 1 -1 50 10 -2 0 10 0 50 100 150 200 0 1 2 20324 T - Ambient Temperature (C) 17437 V (V) amb F Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C T = 25 C 5 j j 1.1 f = 1 kHz f = 1 MHz 2 3 10 1.0 5 2 2 0.9 10 5 2 0.8 10 5 0.7 2 -2 -1 2 082416 0 10 1011100 I (mA) 17440 V (V) 17438 F R Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.4, 31-Jan-18 Document Number: 85413 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (mA) R () F f C (V ) P - Power Dissipation (mW) D R tot C (0 V) D

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC COMPONENTS
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BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
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GENERAL SEMICONDUCTOR (VISHAY)
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ROEDERSTEIN
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SIX
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Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
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Vishay / Thin Film
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Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
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VishayBC Components
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