X-On Electronics has gained recognition as a prominent supplier of 1N4148WS-HE3-18 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. 1N4148WS-HE3-18 Small Signal Switching Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

1N4148WS-HE3-18 Vishay

1N4148WS-HE3-18 electronic component of Vishay
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Part No.1N4148WS-HE3-18
Manufacturer: Vishay
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 100 Volt 350mA 4ns
Datasheet: 1N4148WS-HE3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.143 ea
Line Total: USD 0.14 
Availability - 682589
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2573
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1678
10 : USD 0.1144
25 : USD 0.1132
100 : USD 0.059
250 : USD 0.0584
500 : USD 0.0579
1000 : USD 0.0348

38800
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0276

5496
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0676
100 : USD 0.0542
300 : USD 0.0476
1000 : USD 0.0426
5000 : USD 0.0387
10000 : USD 0.0367

682589
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.143
10 : USD 0.1034
100 : USD 0.0682
1000 : USD 0.0462
2500 : USD 0.0396
10000 : USD 0.0319
20000 : USD 0.0297
50000 : USD 0.0286

9700
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0279

2143
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 592
Multiples : 1
592 : USD 0.0666
1000 : USD 0.0398
2000 : USD 0.035

38800
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0276

2573
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 257
Multiples : 1
257 : USD 0.0584
500 : USD 0.0579
1000 : USD 0.0348

   
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Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
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Vf - Forward Voltage
Ir - Reverse Current
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We are delighted to provide the 1N4148WS-HE3-18 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4148WS-HE3-18 and other electronic components in the Small Signal Switching Diodes category and beyond.

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1N4148WS www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MARKING (example only) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 X Y 22610 MECHANICAL DATA Bar = cathode marking Case: SOD-323 XY = type code Weight: approx. 4.3 mg Packaging codes / options: DESIGN SUPPORT TOOLS click logo to get started 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4148WS-E3-08 or 1N4148WS-E3-18 1N4148WS Single A2 Tape and reel 1N4148WS-HE3-08 or 1N4148WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 R V Repetitive peak reverse voltage V 100 RRM Average rectified current half wave f 50 Hz I 150 (1) F(AV) rectification with resistive load mA Surge forward current t < 1 s and T = 25 C I 350 j FSM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.3, 06-Jul-17 Document Number: 85751 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4148WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 1V F F Forward voltage I = 100 mA V 1.2 V F F V = 20 V I 25 nA R R V = 75 V I 5 R R Leakage current V = 100 V I 100 A R R V = 20 V, T = 150 C I 50 R j R Diode capacitance V = V = 0 V C 4pF F R D Tested with 50 mA pulses, Voltage rise when switching ON t = 0.1 s, rise time < 30 ns, V 2.5 V p fr f = (5 to 100) kHz p I = 10 mA, i = 1 mA, V = 6 V, F R R Reverse recovery time t 4ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3 250 10 200 2 10 T = 100 C T = 25 C j j 150 10 100 1 -1 50 10 -2 0 10 0 50 100 150 200 0 1 2 20324 T - Ambient Temperature (C) 17437 V (V) amb F Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C T = 25 C 5 j j 1.1 f = 1 kHz f = 1 MHz 2 3 10 1.0 5 2 2 0.9 10 5 2 0.8 10 5 0.7 2 -2 -1 2 082416 0 10 1011100 I (mA) 17440 V (V) 17438 F R Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 2.3, 06-Jul-17 Document Number: 85751 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (mA) R () F f C (V ) P - Power Dissipation (mW) D R tot C (0 V) D

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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