VS-40EPS..PbF Series, VS-40EPS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A Base FEATURES cathode Very low forward voltage drop 150 C max. operating junction temperature 2 Glass passivated pellet chip junction Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: 1 13 Available for definitions of compliance please see TO-247AC modied Cathode Anode www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Input rectification Package TO-247AC modified (2 pins) Vishay Semiconductors switches and output rectifiers I 40 A F(AV) which are available in identical package outlines V 800 V to 1200 V R DESCRIPTION V at I 1.1 V F F High voltage rectifiers optimized for very low forward I 475 A FSM voltage drop with moderate leakage. T max. 150 C J These devices are intended for use in main rectification Diode variation Single die (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 40 A F(AV) V Range 800/1200 V RRM I 475 A FSM V 40 A, T = 25 C 1.1 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-40EPS08PbF, VS-40EPS08-M3 800 900 1 VS-40EPS12PbF, VS-40EPS12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 40 F(AV) C 10 ms sine pulse, rated V applied 400 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 475 10 ms sine pulse, rated V applied 800 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1131 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 A s Revision: 12-Oct-16 Document Number: 94343 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-40EPS..PbF Series, VS-40EPS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS 20 A, T = 25 C 1.0 J Maximum forward voltage drop V V FM 40 A, T = 25 C 1.1 J Forward slope resistance r 7.16 m t T = 150 C J 0.74 V Threshold voltage V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storrage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.6 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 40EPS08 Marking device Case style TO-247AC modified (JEDEC) 40EPS12 VS-40EPS.. Series VS-40EPS.. Series R (DC) = 0.6 K/W R (DC) = 0.6 K/W thJC thJC Conduction angle Conduction period 30 30 60 60 90 120 90 180 120 180 DC 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 12-Oct-16 Document Number: 94343 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 150 150 145 140 140 135 130 130 125 120 120 115 110 105 110 100 95 100 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperture (C)