4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B C E Special construction: therefore, extra low 6 54 coupling capacity of typical 0.2 pF, high common mode rejection Low temperature coefficient of CTR Rated isolation voltage (RMS includes DC) 1 23 V = 600 V (848 V peak) IOWM RMS A (+) C(-) NC Rated recurring peak voltage (repetitive) V V = 600 V IORM RMS DE Thickness through insulation 0.4 mm 18537 4 Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 17201 4 Rated impulse voltage (transient overvoltage) V = 6 kV peak IOTM DESCRIPTION Isolation test voltage (partial discharge test voltage) The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a V = 1.6 kV pd phototransistor optically coupled to a gallium arsenide Compliant to RoHS directive 2002/95/EC and in infrared-emitting diode in a 6-lead plastic dual inline accordance to WEEE 2002/96/EC package. APPLICATIONS VDE STANDARDS Switch-mode power supplies These couplers perform safety functions according to the Line receiver following equipment standards: Computer peripheral interface DIN EN 60747-5-5 (VDE 0884) Microprocessor system interface Optocoupler for electrical safety requirements Circuits for safe protective separation against electrical IEC 60950 shock according to safety class II (reinforced isolation): Office machines (applied for reinforced isolation for mains - for appl. class I - IV at mains voltage 300 V voltage 400 V ) RMS - for appl. class I - III at mains voltage 600 V VDE 0804 according to DIN EN 60747-5-5 Telecommunication apparatus and data processing AGENCY APPROVALS IEC 60065 UL1577, file no. E52744, double protection Safety for mains-operated electronic and related household BSI: BS EN 41003, BS EN 60065 (BS 415), pending apparatus DIN EN 60747-5-5 (VDE 0884) FIMKO (SETI): EN 60950, certificate no. FI25155 (1) ORDER INFORMATION PART REMARKS 4N25GV CTR > 20 % wide lead spacing, DIP-6 4N35GV CTR > 100 % wide lead spacing, DIP-6 4N25V CTR > 20 %, DIP-6 4N35V CTR > 100 %, DIP-6 Note (1) G = leadform 10.16 mm G is not marked on the body. Document Number: 83530 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 2.0, 26-Oct-09 139 4N25V, 4N25GV, 4N35V, 4N35GV Optocoupler, Phototransistor Output Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation P 70 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 32 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 70 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) V 5000 V ISO RMS Total power dissipation P 200 mW tot Ambient temperature range T - 55 to + 100 C amb Storage temperature range T - 55 to + 125 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. (1) ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.2 1.4 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 1 mA V 32 V C CEO Emitter collector voltage I = 100 A V7V E ECO V = 10 V, I = 0, CE F I 50 nA CEO T = 100 C amb Collector emitter leakage current V = 30 V, I = 0, CE F I 500 nA CEO T = 100 C amb COUPLER Collector emitter saturation voltage I = 50 mA, I = 2 mA V 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 110 kHz c R = 100 L Coupling capacitance f = 1 MHz C 1pF k Note (1) T = 25 C, unless otherwise specified. amb Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83530 140 Rev. 2.0, 26-Oct-09