VS-50WQ04FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
FEATURES
Base
cathode
Popular D-PAK outline
4, 2
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
1
3
D-PAK (TO-252AA)
Anode Anode
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 C
I 5.5 A
F(AV)
V 40 V
R
DESCRIPTION
V at I See Electrical table
F F
The VS-50WQ04FNPbF surface mount Schottky rectifier
I 40 mA at 125 C
RM
has been designed for applications requiring low forward
T max. 150 C
J
drop and small foot prints on PC board. Typical applications
Diode variation Single die
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
E 9 mJ
AS
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 5.5 A
F(AV)
V 40 V
RRM
I t = 5 s sine 340 A
FSM p
V 5 Apk, T = 125 C 0.44 V
F J
T Range - 40 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOLVS-50WQ04FNPbF UNITS
Maximum DC reverse voltage V
R
40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 135 C, rectangular waveform 5.5
F(AV) C
See fig. 5
A
Maximum peak one cycle Following any rated load
5 s sine or 3 s rect. pulse 550
non-repetitive surge current I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse 90
See fig. 7 V applied
RRM
Non-repetitive avalanche energy E T = 25 C, I = 1.5 A, L = 8 mH 9 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 1.2 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Document Number: 94233 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-50WQ04FNPbF
Schottky Rectifier, 5.5 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
5 A 0.51
T = 25 C
J
10 A 0.63
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
5 A 0.44
T = 125 C
J
10 A 0.59
T = 25 C 3
Maximum reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 40
J
Thereshold voltage V 0.27 V
F(TO)
T =T maximum
J J
Forward slope resistance r 26.77 m
t
Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 405 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH
S
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and storage
(1)
T , T - 40 to 150 C
J Stg
temperature range
Maximum thermal resistance, DC operation
R 3.0 C/W
thJC
junction to case See fig. 4
0.3 g
Approximate weight
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 50WQ04FN
Note
dP
tot 1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT R
J thJA
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94233
2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11