BA779-2-G www.vishay.com Vishay Semiconductors RF PIN Diodes - Dual Series FEATURES Wide frequency range 10 MHz to 1 GHz 3 AEC-Q101 qualified Base P/N-HG3 - green, automotive grade Material categorization: For definitions of compliance please see 12 www.vishay.com/doc 99912 APPLICATIONS Current controlled HF resistance in adjustable attenuators MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE INTERNAL PART ORDERING CODE TYPE MARKING REMARKS CONSTRUCTION BA779-2-G BA779-2-HG3-08 or BA779-2-HG3-18 PH2 Dual series Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PART TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Forward continuous current I 50 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT on PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperatureBase P/N-HG3 - T 125 C j green, automotive grade Storage temperature range T - 55 to + 150 C stg Operating temperature range T - 55 to + 125 C op ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 20 mA V 1V F F Reverse current V = 30 V I 0.05 A R R Diode capacitance f = 100 MHz, V = 0 V C 0.5 pF R D Differential forward resistance f = 100 MHz, I = 1.5 mA r 50 F f Reverse impedance f = 100 MHz, V = 0 V BA779-2-G z5k R r Minority carrier lifetime I = 10 mA, I = 10 mA 4s F R Rev. 1.2, 25-Feb-13 Document Number: 83322 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BA779-2-G www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 10 T = 25 C amb 1 Scattering Limit 0.1 0.01 2.0 0 0.4 0.8 1.2 1.6 95 9735 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage 10 000 1000 100 f > 20 MHz T = 25 C j 10 1 10 0.001 0.01 0.1 1 95 9734 I - Forward Current (mA) F Fig. 2 - Differential Forward Resistance vs. Forward Current 20 - Circuitwith 10 dB Attenuation 0 V =40dBmV 0 f = 100 MHzunmodulated 1 - 20 - 40 - 60 - 80 0 20 40 60 80 f , modulated with 200 kHz, m = 100 % (MHz) 95 9733 2 Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f 2 Rev. 1.2, 25-Feb-13 Document Number: 83322 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 r - Differential Forward Resistance () a - Typical Cross Modulation Distortion (dB) f I - Forward Current (mA) F