X-On Electronics has gained recognition as a prominent supplier of BA779-HG3-08 PIN Diodes across the USA, India, Europe, Australia, and various other global locations. BA779-HG3-08 PIN Diodes are a product manufactured by Vishay. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.

BA779-HG3-08 Vishay

BA779-HG3-08 electronic component of Vishay
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See Product Specifications
Part No.BA779-HG3-08
Manufacturer: Vishay
Category: PIN Diodes
Description: PIN Diodes 30V 50mA AUTO
Datasheet: BA779-HG3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.0981
10 : USD 0.0932
25 : USD 0.0702
100 : USD 0.068
250 : USD 0.0659
500 : USD 0.0636
1000 : USD 0.0623
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8667
10 : USD 0.6129
100 : USD 0.1508
500 : USD 0.1113
1000 : USD 0.0886
3000 : USD 0.0799
6000 : USD 0.0767
9000 : USD 0.0702
N/A

Obsolete
0
MOQ : 100
Multiples : 1
100 : USD 0.0709
250 : USD 0.0659
500 : USD 0.0636
1000 : USD 0.0623
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0178
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Minimum Operating Frequency
Maximum Operating Frequency
Mounting Style
Package / Case
Series
Packaging
Configuration
Frequency Range
Brand
Carrier Life
Factory Pack Quantity :
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BA779-HG3-08 from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BA779-HG3-08 and other electronic components in the PIN Diodes category and beyond.

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BA779-G www.vishay.com Vishay Semiconductors RF PIN Diodes FEATURES Wide frequency range 10 MHz to 1 GHz 3 AEC-Q101 qualified Base P/N-HG3 - green, automotive grade Material categorization: For definitions of compliance please see 12 www.vishay.com/doc 99912 APPLICATIONS Current controlled HF resistance in adjustable attenuators MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes/options: 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE INTERNAL PART ORDERING CODE TYPE MARKING REMARKS CONSTRUCTION BA779-G BA779-HG3-08 PH1 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PART TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Forward continuous current I 50 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT on PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T - 55 to + 150 C stg Operating temperature range T - 55 to + 125 C op ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 20 mA V 1V F F Reverse current V = 30 V I 0.05 A R R Diode capacitance f = 100 MHz, V = 0 V C 0.5 pF R D Differential forward resistance f = 100 MHz, I = 1.5 mA r 50 F f Reverse impedance f = 100 MHz, V = 0 V BA779-G z5k R r Minority carrier lifetime I = 10 mA, I = 10 mA 4s F R Rev. 1.2, 25-Feb-13 Document Number: 83321 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BA779-G www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 10 T = 25 C amb 1 Scattering Limit 0.1 0.01 2.0 0 0.4 0.8 1.2 1.6 95 9735 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage 10 000 1000 100 f > 20 MHz T = 25 C j 10 1 10 0.001 0.01 0.1 1 95 9734 I - Forward Current (mA) F Fig. 2 - Differential Forward Resistance vs. Forward Current 20 - Circuitwith 10 dB Attenuation 0 V =40dBmV 0 f = 100 MHzunmodulated 1 - 20 - 40 - 60 - 80 0 20 40 60 80 f , modulated with 200 kHz, m = 100 % (MHz) 95 9733 2 Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f 2 Rev. 1.2, 25-Feb-13 Document Number: 83321 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 r - Differential Forward Resistance () a - Typical Cross Modulation Distortion (dB) f I - Forward Current (mA) F

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS
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