BAS383-TR3 Vishay

BAS381, BAS382, BAS383 www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time DESIGN SUPPORT TOOLS click logo to get started AEC-Q101 qualified Material categorization: for definitions of compliance Models Available please see www.vishay.com/doc 99912 MECHANICAL DATA APPLICATIONS Case: MicroMELF General purpose and switching Schottky barrier diode Weight: approx. 12 mg HF-detector Cathode band color: black Protection circuit Packaging codes/options: Diode for low currents with a low supply voltage TR3/10K per 13 reel (8 mm tape), 10K/box Small battery charger TR/2.5K per 7 reel (8 mm tape), 12.5K/box Power supplies DC/DC converter for notebooks PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS381 V = 40 V BAS381-TR3 or BAS381-TR Single Tape and reel R BAS382 V = 50 V BAS382-TR3 or BAS382-TR Single Tape and reel R BAS383 V = 60V BAS383-TR3 or BAS383-TR Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAS381 V 40 V R Reverse voltage BAS382 V 50 V R BAS383 V 60 V R Peak forward surge current t = 1 s I 500 mA p FSM Repetitive peak forward current I 150 mA FRM Forward continuous current I 30 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Junction to ambient air R 320 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Rev. 2.2, 02-Jun-17 Document Number: 85503 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS381, BAS382, BAS383 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1mA V 330 mV F F Forward voltage I = 1 mA V 410 mV F F I = 15 mA V 1000 mV F F Reserve current V = V I 200 nA R Rmax. R Diode capacitance V = 1 V, f = 1 MHz C 1.6 pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 14 V = 60 V R 12 100 R = 540 K/W thJA T = 125 C j 10 10 8 T = 25 C j 6 1 PP - Limit at 100 % - Limit at 100 %VV RR R R 4 P - Limit at 80 % V 0.1 R R 2 0.01 0 0 0.5 1 1.5 2.0 25 50 75 100 125 150 15794 T - Junction Temperature (C) 15796 V - Forward Voltage (V) F j Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 2.0 V = V f = 1 MHz R RRM 1.8 1.6 100 1.4 1.2 10 1.0 0.8 0.6 1 0.4 0.2 0.1 0 0.1 1 10 100 25 50 75 100 125 150 15797 V - Reverse Voltage (V) 15795 T - Junction Temperature (C) R j Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.2, 02-Jun-17 Document Number: 85503 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R C - Diode Capacitance (pF) I- Forward Current (mA) D F