BAT81S, BAT82S, BAT83S www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS General purpose and switching Schottky barrier diode HF-detector Models Available Protection circuit Diode for low currents with a low supply voltage MECHANICAL DATA Small battery charger Case: DO-35 (DO-204AH) Power supplies Weight: approx. 125 mg DC/DC converter for notebooks Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION BAT81S V = 40 V BAT81S-TR or BAT81S-TAP Single BAT81S Tape and reel/ammopack R BAT82S V = 50 V BAT82S-TR or BAT82S-TAP Single BAT82S Tape and reel/ammopack R BAT83S V = 60 V BAT83S-TR or BAT83S-TAP Single BAT83S Tape and reel/ammopack R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAT81S V 40 V R Reverse voltage BAT82S V 50 V R BAT83S V 60 V R Forward continuous current I 30 mA F Peak forward surge current t 10 ms I 500 mA p FSM Repetitive peak forward current t 1 s I 150 mA p FRM THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air I = 4 mm, T = constant R 320 K/W L thJA Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1 mA V 330 mV F F Forward voltage I = 1 mA V 410 mV F F I = 15 mA V 1000 mV F F Reverse current V = V I 200 nA R Rmax. R Diode capacitance V = 1 V, f = 1 MHz C 1.6 pF R D Rev. 2.0, 04-Apr-17 Document Number: 85512 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT81S, BAT82S, BAT83S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 14 1000 V = 60 V R 12 100 R = 540 K/W thJA T = 125 C 10 j 10 8 T = 25 C j 6 1 PP - Limit at 100 % - Limit at 100 %VV R R R R 4 P - Limit at 80 % V 0.1 R R 2 0 0.01 0 0.5 1 1.5 2.0 25 50 75 100 125 150 15794 T - Junction Temperature (C) 15796 V - Forward Voltage (V) j F Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 2.0 V = V f = 1 MHz R RRM 1.8 1.6 100 1.4 1.2 10 1.0 0.8 0.6 1 0.4 0.2 0.1 0 0.1 1 10 100 25 50 75 100 125 150 15797 V - Reverse Voltage (V) 15795 T - Junction Temperature (C) j R Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.0, 04-Apr-17 Document Number: 85512 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R 0.6 max. 0.024 0.4 min. 0.015 C - Diode Capacitance (pF) I- Forward Current (mA) D F 1.7 0.067 1.3 0.050