Control DG2722 Vishay Siliconix 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch FEATURES DESCRIPTION Halogen-free according to IEC 61249-2-21 The DG2722 is 2 port high speed analog switch optimized for Definition USB 2.0 signal switching. The DG2722 switch is configured Wide operation voltage range in DPDT. It handles bidirectional signal flow, achieving a Low on-resistance, 7 (typical at 3 V) 900 MHz - 3 dB bandwidth, and a port to port crosstalk and isolation at - 49 dB. Low capacitance, C = 5.8 pF (typical) ON Processed with high density sub micron CMOS, the DG2722 3 dB high bandwidth: 900 MHz (typical) provide low parasitic capacitance. Signals are routed with Low bit to bit skew: 40 pS (typical) minimized phase distortion and attain a bit to bit skew is as Low power consumption low as 40 pS. Low logic threshold: V The DG2722 is designed for a wide range of operating Power down protection: D+/D- pins can tolerate up to voltages, from 2.7 V to 4.3 V that can be driven directly from 5 V when V+ = 0 V one cell Li-ion battery. On-chip circuitry protects against Logic (S and OE) above V+ tolerance conditions when either the D+/D- lines are shorted to the 8 kV ESD protection (HBM) V at the USB port. Additionally, logic control pins (S and BUS Latch-up current 300 mA per JESD78 OE) can tolerate the presence of voltages that are above the Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm supply power rail (V+). The control logic threshold is x 0.55 mm) guaranteed to be (V = 1.3 V/min). Latch up current is IH Compliant to RoHS Directive 2002/95/EC 300 mA, as per JESD78, and its ESD tolerance exceeds 8 kV. APPLICATIONS Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal Cellular phones switching application. Portable media players As a committed partner to the community and the PDA environment, Vishay Siliconix manufactures this product with Digital camera lead (Pb)-free device termination. The miniQFN-10 package GPS has a nickel-palladium-gold device termination and is Notebook computer represented by the lead (Pb)-free -E4 suffix to the ordering TV, monitor, and set top box part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. As a further sign of Vishay Siliconix s commitment, the DG2722 is fully RoHS complaint. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION miniQFN-10L 7 6 5 HSD2+ OE 8 V+ 9 4 HSD2- Rx S 10 3 GND 1 2 Pin 1 Pin 1: LONG LEAD Device marking: Rx for DG2722 Top View x = Date/Lot Traceability Code Document Number: 68379 www.vishay.com S11-2216-Rev. F, 14-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 D+ HSD1+ D- HSD1-DG2722 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number - 40 C to 85 C miniQFN-10 DG2722DN-T1-E4 TRUTH TABLE PIN DESCRIPTIONS OE (Pin 8) S (Pin 10) Function Pin Name Description 0 0 D+ = HSD1+ and D- = HSD1- OE Bus Switch Enable 0 1 D+ = HSD2+ and D- = HSD2- S Select Input 1 X Disconnect HSD1, HSD2, D Data Port ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Limit Unit V+ - 0.3 to 5 Reference to GND V a S, OE, D, HSD1, HSD2 - 0.3 to (V+ + 0.3) Current (Any Terminal except S, OE, D, HSD1, HSD2) 30 mA Continuous Current (S, OE, D, HSD1, HSD2) 250 Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) 500 Storage Temperature (D Suffix) - 65 to 150 C b c Power Dissipation (Packages) miniQFN-10 208 mW ESD (Human Body Model) I/O to GND 8 kV Latch-up (Current Injection) 300 mA Notes: a. Signals on S, OE, D, HSD1, HSD2 exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/C above 70 C. SPECIFICATIONS (V+ = 3 V) Limits - 40 C to 85 C Test Conditions a b c b Parameter Symbol Otherwise Unless Specified Temp. Min. Typ. Max. Unit Analog Switch d Analog Signal Range V R Full 0 V+ V ANALOG DS(on) Room 7 8 On-Resistance R V+ = 3 V, I = 8 mA, V = 0.4 V DS(on) D HSD1/2 Full 9 d On-Resistance Match R V+ = 3 V, I = 8 mA, V = 0.4 V Room 0.8 ON D HSD1/2 On-Resistance Resistance R Flatness V+ = 3 V, I = 8 mA, V = 0 V, 1 V Room 2 d ON D HSD1/2 Flatness V+ = 4.3 V, V = 0.3 V, 3 V, HSD1/2 Switch Off Leakage Current I Full - 100 100 (off) V = 3 V, 0.3 V D nA V+ = 4.3 V, V = 0.3 V, 4 V, HSD1/2 Channel On Leakage Current I Full - 200 200 (on) V = 4 V, 0.3 V D Digital Control V+ = 3 V to 3.6 V Full 1.3 Input Voltage High V INH V+ = 4.3 V Full 1.5 V Input Voltage Low V V+ = 3 V to 4.3 V Full 0.5 INL Input Capacitance C Full 6.5 pF IN Input Current I or I V = 0 or V+ Full - 1 1 A INL INH IN www.vishay.com Document Number: 68379 2 S11-2216-Rev. F, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000